Effect of reactive ion beam etching on the photoluminescence of CdTe epitaxial layers

被引:0
|
作者
Martinez-Pastor, J. [1 ]
Fuster, D. [2 ]
Abellán, M. [2 ]
Anguita, J. [2 ]
Sochinskii, N.V. [2 ]
机构
[1] Instituto de Ciencia de Los Materials, Universidad de Valencia, P.O. Box 22085, 46071 Valencia, Spain
[2] Instituto de Microelectrónica de Madrid, Isaac Newton 8, Tres Cantos, 28760 Madrid, Spain
来源
Journal of Applied Physics | 2008年 / 103卷 / 05期
关键词
14;
D O I
暂无
中图分类号
学科分类号
摘要
Journal article (JA)
引用
收藏
相关论文
共 50 条
  • [1] Effect of reactive ion beam etching on the photoluminescence of CdTe epitaxial layers
    Martinez-Pastor, J.
    Fuster, D.
    Abellan, M.
    Anguita, J.
    Sochinskii, N. V.
    JOURNAL OF APPLIED PHYSICS, 2008, 103 (05)
  • [2] Epitaxial growth of CdTe on (211) silicon mesas formed by deep reactive ion etching
    Molstad, Jay
    Boyd, Phil
    Markunas, Justin
    Smith, David J.
    Smith, Ed
    Gordon, Eli
    Dinan, J. H.
    JOURNAL OF ELECTRONIC MATERIALS, 2006, 35 (08) : 1636 - 1640
  • [3] Epitaxial growth of CdTe on (211) silicon mesas formed by deep reactive ion etching
    Jay Molstad
    Phil Boyd
    Justin Markunas
    David J. Smith
    Ed Smith
    Eli Gordon
    J. H. Dinan
    Journal of Electronic Materials, 2006, 35 : 1636 - 1640
  • [4] Dry etching of GaN using reactive ion beam etching and chemically assisted reactive ion beam etching
    Lee, JW
    Park, HS
    Park, YJ
    Yoo, MC
    Kim, TI
    Kim, HS
    Yeom, GY
    GALLIUM NITRIDE AND RELATED MATERIALS II, 1997, 468 : 373 - 377
  • [5] SELECTIVE ETCHING AND PHOTOLUMINESCENCE OF EPITAXIAL CdTe FILMS ON GaAs SUBSTRATES.
    Faschinger, W.
    Lischka, K.
    Sitter, H.
    Chemtronics, 1987, 2 (01): : 28 - 31
  • [6] Reactive ion etching and ion beam etching for ferroelectric memories
    Shao, TQ
    Ren, TL
    Liu, LT
    Zhu, J
    Li, ZJ
    INTEGRATED FERROELECTRICS, 2004, 61 : 213 - 220
  • [7] Reactive Ion-Beam Etching of Thick Polyimide Layers in an Oxygen + Argon Mixture
    Stognij A.I.
    Timoshkov Yu.V.
    Orekhovskaya T.I.
    Koryakin S.V.
    Lobko E.V.
    Russian Microelectronics, 2001, 30 (5) : 330 - 334
  • [8] REACTIVE ION-BEAM ETCHING.
    Heath, B.A.
    Mayer, T.M.
    VLSI Electronics, Microstructure Science, 1984, 8 : 365 - 409
  • [9] INTRODUCTION TO REACTIVE ION-BEAM ETCHING
    DOWNEY, DF
    BOTTOMS, WR
    HANLEY, PR
    SOLID STATE TECHNOLOGY, 1981, 24 (02) : 121 - 127
  • [10] VLSI REACTIVE ION-BEAM ETCHING
    CUSTODE, FZ
    FEWER, W
    SPLINTER, M
    DOWNEY, DF
    JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1981, 128 (03) : C105 - C105