Growth condition dependence of spin-polarized electroluminescence in Fe / MgO/light-emitting diodes

被引：0
|
作者：
Manago, Takashi [1 ]
Sinsarp, Asawin [2 ]
Akinaga, Hiro [2 ]
机构：
[1] Department of Electronics and Computer Science, Tokyo University of Science, Yamaguchi, 1-1-1 Daigaku-Dori, Sanyo-Onoda, Yamaguchi 756-0884, Japan
[2] Nanotechnology Research Institute (NRI), National Institute of Advanced Industrial Science and Technology (AIST), 1-1-1 Umezono, Tsukuba, Ibaraki 305-8568, Japan
来源：
Journal of Applied Physics | 2007年 / 102卷 / 08期
关键词：
13;
D O I：
暂无
中图分类号：
学科分类号：
摘要：
Journal article (JA)
引用
收藏
相关论文
共 50 条
  • [41] Rate-equation model of spin dynamics and polarized light emission for spin light-emitting diodes
    Brandt, Oliver
    Ramsteiner, Manfred
    Flissikowski, Timur
    Herfort, Jens
    Grahn, Holger T.
    PHYSICAL REVIEW B, 2010, 81 (11):
  • [42] Temperature dependence of polarized electroluminescence side emission from (0001)-oriented blue and violet InGaN/GaN light-emitting diodes
    Du, Xiaozhang
    Lu, Hai
    Han, Ping
    Zhang, Rong
    Zheng, Youdou
    APPLIED PHYSICS LETTERS, 2008, 92 (20)
  • [43] Chiral CdSe/CdS quantum dot (in rod)-light-emitting diodes with circularly polarized electroluminescence
    Duan, Tianwei
    Ai, Jing
    Chen, Sujie
    He, Gufeng
    Guo, Xiaojun
    Han, Lu
    Che, Shunai
    Duan, Yingying
    NANO RESEARCH, 2022, 15 (10) : 9573 - 9577
  • [44] Chiral CdSe/CdS quantum dot (in rod)-light-emitting diodes with circularly polarized electroluminescence
    Tianwei Duan
    Jing Ai
    Sujie Chen
    Gufeng He
    Xiaojun Guo
    Lu Han
    Shunai Che
    Yingying Duan
    Nano Research, 2022, 15 : 9573 - 9577
  • [45] Spin-polarized light-emitting diodes based on heterostructures with a GaAs/InGaAs/GaAs quantum well and ferromagnetic GaMnSb injection layer
    M. V. Dorokhin
    E. I. Malysheva
    A. V. Zdoroveishchev
    Yu. A. Danilov
    Technical Physics Letters, 2012, 38 : 764 - 767
  • [46] Spin-Polarized Light-Emitting Diodes Based on Heterostructures with a GaAs/InGaAs/GaAs Quantum Well and Ferromagnetic GaMnSb Injection Layer
    Dorokhin, M. V.
    Malysheva, E. I.
    Zdoroveishchev, A. V.
    Danilov, Yu. A.
    TECHNICAL PHYSICS LETTERS, 2012, 38 (08) : 764 - 767
  • [47] Temperature dependence of electroluminescence from silicon p-i-n light-emitting diodes
    Li, Cheng
    Lai, Hongkai
    Chen, Songyan
    Suemasu, T.
    Hasegawa, F.
    JOURNAL OF APPLIED PHYSICS, 2006, 100 (02)
  • [48] GaN/MgO/ZnO heterojunction light-emitting diodes
    Chen, Xinyi
    Ng, Alan M. C.
    Djurisic, Aleksandra B.
    Chan, Wai Kin
    Fong, P. W. K.
    Lui, H. F.
    Surya, C.
    Cheng, C. C. W.
    Kwok, W. M.
    THIN SOLID FILMS, 2013, 527 : 303 - 307
  • [49] Temperature dependence of electroluminescence from silicon p-i-n light-emitting diodes
    Li, Cheng
    Lai, Hongkai
    Chen, Songyan
    Suemasu, T.
    Hasegawa, F.
    Journal of Applied Physics, 2006, 100 (02):
  • [50] Temperature dependences of photoluminescence and electroluminescence spectra in light-emitting diodes
    Li, Lian
    Li, Ping
    Wen, Yumei
    Wen, Jing
    Zhu, Yong
    APPLIED PHYSICS LETTERS, 2009, 94 (26)
12345