Effects of energy distribution of interface traps on recombination dc current-voltage line shape

被引：0
|
作者：
Chen, Zuhui [1 ,2 ]
Jie, Bin B. [1 ,3 ]
Sah, Chih-Tang [1 ]
机构：
[1] Florida Solid-State Electronics Laboratory, University of Florida, Gainesville, FL 32611-6200
[2] Xiamen University, Xiamen, China
[3] Peking University, Beijing, China
来源：
Journal of Applied Physics | 2006年 / 100卷 / 11期
关键词：
Electron traps;
D O I：
暂无
中图分类号：
学科分类号：
摘要：
Journal article (JA)
引用
收藏
相关论文
共 50 条
  • [11] Influence of electron energy distribution in nanocathodes on current-voltage characteristics
    Evtukh, A.
    Grygoriev, A.
    Litovchenko, V.
    Steblova, O.
    Yilmazoglu, O.
    Hartnagee, H.
    Mimura, H.
    2013 26TH INTERNATIONAL VACUUM NANOELECTRONICS CONFERENCE (IVNC), 2013,
  • [12] Effects of recombination current on the current-voltage characteristics in metal-InGaAs Schottky diodes
    Wang, XJ
    He, L
    JOURNAL OF APPLIED PHYSICS, 1998, 84 (03) : 1449 - 1453
  • [13] Effects of Transitional Layer of Gate Insulator on Recombination DC Current-Voltage Lineshape in Metal-Oxide-Semiconductor Transistors
    Chen, Zuhui
    Zhou, Xing
    Zhu, Guojun
    JAPANESE JOURNAL OF APPLIED PHYSICS, 2009, 48 (09) : 0914031 - 0914035
  • [14] RECOMBINATION EFFECTS ON CURRENT-VOLTAGE CHARACTERISTICS OF ILLUMINATED SURFACE-BARRIER CELLS
    MCCANN, JF
    HANEMAN, D
    JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1982, 129 (05) : 1134 - 1145
  • [15] Threshold voltage and on-current Variability related to Interface Traps Spatial Distribution
    Velayudhan, V.
    Martin-Martinez, J.
    Porti, M.
    Couso, C.
    Rodriguez, R.
    Nafria, M.
    Aymerich, X.
    Marquez, C.
    Gamiz, F.
    ESSDERC 2015 PROCEEDINGS OF THE 45TH EUROPEAN SOLID-STATE DEVICE RESEARCH CONFERENCE, 2015, : 230 - 233
  • [16] INFLUENCE OF FIELD IONIZATION EFFECT ON CURRENT-VOLTAGE CHARACTERISTIC OF A DIELECTRIC DIODE WITH A NONUNIFORM DISTRIBUTION OF TRAPS
    TIMAN, BL
    FESENKO, VM
    SOVIET PHYSICS SEMICONDUCTORS-USSR, 1971, 5 (03): : 486 - &
  • [17] The impact of interface and border traps on current-voltage, capacitance-voltage, and split-CV mobility measurements in InGaAs MOSFETs
    Pavan, Paolo
    Zagni, Nicolo
    Puglisi, Francesco Maria
    Alian, Alireza
    Thean, Aaron Voon-Yew
    Collaert, Nadine
    Verzellesi, Giovanni
    PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE, 2017, 214 (03):
  • [18] SHAPIRO STEPS ON CURRENT-VOLTAGE CURVES OF DC SQUIDS
    VANNESTE, C
    CHI, CC
    GALLAGHER, WJ
    KLEINSASSER, AW
    RAIDER, SI
    SANDSTROM, RL
    JOURNAL OF APPLIED PHYSICS, 1988, 64 (01) : 242 - 245
  • [19] Impact of interface traps on current-voltage characteristics of 4H-SiC Schottky-barrier diodes
    Moghadam, Hamid Amini
    Dimitrijev, Sima
    Han, Jisheng
    SILICON CARBIDE AND RELATED MATERIALS 2013, PTS 1 AND 2, 2014, 778-780 : 710 - 713
  • [20] Impact of Interface Energy Alignment on the Dynamic Current-Voltage Response of Perovskite Solar Cells
    Sun, Zhe
    Kang, Yanan
    Wang, Guoguo
    Liang, Mao
    Xue, Song
    JOURNAL OF PHYSICAL CHEMISTRY C, 2020, 124 (24): : 12912 - 12921
12345