Impacts of gate recess and passivation on AlGaN/GaN high electron mobility transistors

被引：0
|
作者：
Chan, Chih-Yuan [1 ]
Lee, Ting-Chi [2 ]
Hsu, Shawn S. H. [1 ]
Chen, Leaf [3 ]
Lin, Yu-Syuan [1 ]
机构：
[1] Institute of Electronics Engineering, National Tsing Hua University, Hsinchu, Taiwan
[2] Electronics and Optoelectronics Research Laboratory, Industrial Technology Research Institute, Hsinchu, Taiwan
[3] Department of Electronics Engineering, National Chiao Tung University, Hsinchu, Taiwan
来源：
Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers | 1600年 / 46卷 / 02期
关键词：
High electron mobility transistors;
D O I：
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学科分类号：
摘要：
Journal article (JA)
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页码：478 / 484
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