MOVPE growth of InAs quantum dots for mid-IR applications

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作者：
Photonics Research Center, School of Electrical and Electronic Engineering, Nanyang Technological University, 639798, Singapore, Singapore [1 ]
不详 [2 ]
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来源：
Trans Nonferrous Met Soc China | 2006年 / SUPPL. 1卷 / 25-28期
关键词：
Semiconducting indium gallium arsenide;
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