The pretreatment effects on gate oxide quality of a trench-typed MOSFET device

被引：0
|
作者：
Mosel Vitelic lnc., Taiwan [1 ]
不详 [2 ]
机构：
来源：
Tamkang J. Sci. Eng. | 2008年 / 3卷 / 233-238期
关键词：
D O I：
暂无
中图分类号：
学科分类号：
摘要：
引用
收藏
相关论文
共 50 条
  • [1] The Pretreatment Effects on Gate Oxide Quality of a Trench-Typed MOSFET Device
    Jaw, Kuo-Liang
    Chen, Ping-Hsun
    JOURNAL OF APPLIED SCIENCE AND ENGINEERING, 2008, 11 (03): : 233 - 238
  • [2] SPICE model of trench-gate MOSFET device
    Liu, Chao
    Zhang, Chunwei
    Liu, Siyang
    Sun, Weifeng
    Journal of Southeast University (English Edition), 2016, 32 (04): : 408 - 414
  • [3] The effects of hydrogen annealing on gate oxide integrity of U-shaped trench MOSFET with 400 A gate oxide
    Wu, Chun-Tai
    Sharp, Joelle
    Madson, Gordon
    Michalowicz, Jerzy
    JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 2006, 153 (10) : G916 - G921
  • [4] An oxide filled extended trench gate super junction MOSFET structure
    王彩琳
    孙军
    ChinesePhysicsB, 2009, 18 (03) : 1231 - 1236
  • [5] An oxide filled extended trench gate super junction MOSFET structure
    Wang Cai-Lin
    Sun Jun
    CHINESE PHYSICS B, 2009, 18 (03) : 1231 - 1236
  • [6] GATE OXIDE QUALITY OF DRAM TRENCH CAPACITORS
    ROHL, S
    ENGELHARDT, M
    KELLNER, WU
    SCHLEMM, A
    JOURNAL DE PHYSIQUE, 1988, 49 (C-4): : 283 - 286
  • [7] Tunable trench gate power MOSFET: A feasible superjunction device and process technology
    Yang, X
    Liang, YC
    Samudra, GS
    Liu, Y
    IECON 2004 - 30TH ANNUAL CONFERENCE OF IEEE INDUSTRIAL ELECTRONICS SOCIETY, VOL. 1, 2004, : 729 - 733
  • [8] Influence of gate oxide breakdown on MOSFET device operation
    Pompl, T
    Wurzer, H
    Kerber, M
    Eisele, I
    MICROELECTRONICS RELIABILITY, 2000, 40 (01) : 37 - 47
  • [9] Review on Methods for Trench MOSFET Gate Oxide Reliability and Switching Speed Improvement
    Seng, Ng Hong
    CHINA SEMICONDUCTOR TECHNOLOGY INTERNATIONAL CONFERENCE 2010 (CSTIC 2010), 2010, 27 (01): : 21 - 26
  • [10] An Assessment of Step Patterned Gate Oxide Superjunction Trench MOSFET for Potential Benefits
    Nautiyal, Payal
    Naugarhiya, Alok
    Verma, Shrish
    JOURNAL OF ELECTRONIC MATERIALS, 2019, 48 (12) : 8156 - 8162
12345