Resonant tunneling diode based stress measurement

被引：0
|
作者：
Xiong, Jijun [1 ,2 ]
Mao, Haiyang [1 ,2 ,3 ]
Zhang, Wendong [1 ,2 ]
Xue, Chenyang [1 ,2 ]
机构：
[1] Key Laboratory of Instrumentation Science and Dynamic Measurement, North University of China, Taiyuan 030051, China
[2] Key Laboratory of the Electronic Measurement Technology of the National Defense, North University of China, Taiyuan 030051, China
[3] Institute of Microelectronics, Peking University, Beijing 100871, China
来源：
Pan Tao Ti Hsueh Pao/Chinese Journal of Semiconductors | 2008年 / 29卷 / 02期
关键词：
Aluminum arsenide - Current voltage characteristics - Resonant tunneling - Semiconducting indium gallium arsenide - Semiconductor diodes;
D O I：
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中图分类号：
学科分类号：
摘要：
引用
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页码：324 / 328
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