Electrical properties of the Sm2 Ti2 O7 thin films for metal-insulator- metal capacitor applications

被引：0
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作者：
Jeong, Y.H. [1 ]
Kim, J.C. [1 ]
Lim, J.B. [1 ]
Hong, K.P. [1 ]
Nahm, S. [1 ]
Sun, H.J. [2 ]
Ghong, T.H. [3 ]
Kim, Y.D. [3 ]
Lee, H.J. [4 ]
机构：
[1] Department of Materials Science and Engineering, Korea University, 1-5 Ka, Anam-Dong, Sungbuk-Ku, Seoul 136-701, Korea, Republic of
[2] Department of Materials Science and Engineering, Kunsan National University, San 68, Miryong-dong, Gunsan, Jeonbuk 573-701, Korea, Republic of
[3] Nano Optical Property Laboratory, Department of Physics, Kyung Hee University, 1 Hoegi-Dong, Dongdaemoon-Gu, Seoul 130-701, Korea, Republic of
[4] New Materials Evaluation Center, Korea Research Institute of Standard and Science, Deaduk Science Town, Taejeon 305-600, Korea, Republic of
来源：
Journal of Applied Physics | 2007年 / 101卷 / 08期
关键词：
A homogeneous crystalline Sm2 Ti2 O7 (ST) phase was formed in films grown at temperatures ranging between 100 and 200 °C and subsequently annealed at 900 °C. The ST film had a large dielectric constant of 58; which is similar to that of ST ceramics. The leakage current density of the ST film was low and the Poole-Frenkel emission was suggested as being the leakage current mechanism. The ST film had a negative quadratic voltage coefficient of capacitance (VCC); possibly due to the dipolar relaxation. The 100-nm-thick ST film had a high capacitance density of 5.2 fFμ m2 with a low leakage current density of 1.34 nA cm2 at 2 V. Its quadratic and linear VCCs were -99.5 ppm V2 and 11 ppm/V; respectively; with a low temperature coefficient of capacitance of 135 ppm°C at 100 kHz. These results confirmed the potential for the ST film to be used as a high performance metal-insulator-metal capacitor. © 2007 American Institute of Physics;
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