Improved resistive switching and synaptic characteristics using Ar plasma irradiation on the Ti/HfO2 interface

被引：0
|
作者：
Ku, Boncheol [1 ]
Abbas, Yawar [1 ]
Kim, Sohyeon [1 ]
Sokolov, Andrey Sergeevich [1 ]
Jeon, Yu-Rim [1 ]
Choi, Changhwan [1 ]
机构：
[1] Division of Materials Science and Engineering, Hanyang University, Seoul,04763, Korea, Republic of
来源：
Journal of Alloys and Compounds | 2020年 / 797卷
关键词：
Memristors;
D O I：
暂无
中图分类号：
学科分类号：
摘要：
引用
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页码：277 / 283
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