Improved resistive switching and synaptic characteristics using Ar plasma irradiation on the Ti/HfO2 interface

被引：0
|
作者：
Ku, Boncheol [1 ]
Abbas, Yawar [1 ]
Kim, Sohyeon [1 ]
Sokolov, Andrey Sergeevich [1 ]
Jeon, Yu-Rim [1 ]
Choi, Changhwan [1 ]
机构：
[1] Division of Materials Science and Engineering, Hanyang University, Seoul,04763, Korea, Republic of
来源：
Journal of Alloys and Compounds | 2020年 / 797卷
关键词：
Memristors;
D O I：
暂无
中图分类号：
学科分类号：
摘要：
引用
下载
收藏
页码：277 / 283
相关论文
共 50 条
  • [41] Electric characteristics and resistive switching mechanism of Ni/HfO2/Pt resistive random access memory cell
    Pang Hua
    Deng Ning
    ACTA PHYSICA SINICA, 2014, 63 (14)
  • [42] Demonstration of synaptic and resistive switching characteristics in W/TiO2/HfO2/TaN memristor crossbar array for bioinspired neuromorphic computing
    Muhammad Ismail
    Umesh Chand
    Chandreswar Mahata
    Jamel Nebhen
    Sungjun Kim
    Journal of Materials Science & Technology, 2022, 96 (01) : 94 - 102
  • [43] Suppression of endurance degradation by utilizing oxygen plasma treatment in HfO2 resistive switching memory
    Chand, Umesh
    Huang, Chun-Yang
    Jieng, Jheng-Hong
    Jang, Wen-Yueh
    Lin, Chen-Hsi
    Tseng, Tseung-Yuen
    APPLIED PHYSICS LETTERS, 2015, 106 (15)
  • [44] Demonstration of synaptic and resistive switching characteristics in W/TiO2/HfO2/TaN memristor crossbar array for bioinspired neuromorphic computing
    Ismail, Muhammad
    Chand, Umesh
    Mahata, Chandreswar
    Nebhen, Jamel
    Kim, Sungjun
    JOURNAL OF MATERIALS SCIENCE & TECHNOLOGY, 2022, 96 : 94 - 102
  • [45] Any-polar resistive switching behavior in Ti-intercalated Pt/Ti/HfO2/Ti/Pt device
    焦金龙
    甘秋宏
    程实
    廖晔
    柯少颖
    黄巍
    汪建元
    李成
    陈松岩
    Chinese Physics B, 2021, 30 (11) : 668 - 672
  • [46] Any-polar resistive switching behavior in Ti-intercalated Pt/Ti/HfO2/Ti/Pt device*
    Jiao, Jin-Long
    Gan, Qiu-Hong
    Cheng, Shi
    Liao, Ye
    Ke, Shao-Ying
    Huang, Wei
    Wang, Jian-Yuan
    Li, Cheng
    Chen, Song-Yan
    CHINESE PHYSICS B, 2021, 30 (11)
  • [47] The Resistive Switching Characteristics of TiN/HfO2/Ag RRAM Devices with Bidirectional Current Compliance
    C. Sun
    S. M. Lu
    F. Jin
    W. Q. Mo
    J. L. Song
    K. F. Dong
    Journal of Electronic Materials, 2019, 48 : 2992 - 2999
  • [48] The Resistive Switching Characteristics of TiN/HfO2/Ag RRAM Devices with Bidirectional Current Compliance
    Sun, C.
    Lu, S. M.
    Jin, F.
    Mo, W. Q.
    Song, J. L.
    Dong, K. F.
    JOURNAL OF ELECTRONIC MATERIALS, 2019, 48 (05) : 2992 - 2999
  • [49] Silicon/HfO2 Interface: Effects of Gamma Irradiation
    Maurya, Savita
    DAE SOLID STATE PHYSICS SYMPOSIUM 2015, 2016, 1731
  • [50] Dual bipolar resistive switching in the sub-forming regime of HfO2 resistive switching devices
    Recher, Shani
    Yalon, Eilam
    Ritter, Dan
    Riess, Ilan
    Salzman, Joseph
    SOLID-STATE ELECTRONICS, 2015, 111 : 238 - 242
12345