Ion attachment mass spectrometry of nonequilibrium atmospheric-pressure pulsed remote plasma for SiO2 etching

被引：0
|
作者：
Iwasaki, Masahiro [1 ]
Ito, Masafumi [2 ]
Uehara, Tsuyoshi [3 ]
Nakamura, Megumi [4 ]
Hori, Masaru [5 ]
机构：
[1] Department of Quantum Engineering, Graduate School of Engineering, Nagoya University, Furo-cho, Nagoya-shi, Aichi 464-8603, Japan
[2] Department of Opto-mechatoronics, Faculty of Systems Engineering, Wakayama University, 930 Sakaedani, Wakayama 640-8510, Japan
[3] Sekisui Chemical Co., Ltd., 32 Wadai, Tsukuba-shi, Ibaraki 300-4292, Japan
[4] Canon ANELVA Technix Corporation, 3-51-4 Bubai-cho, Fuchu-shi, Tokyo 183-0033, Japan
[5] Department of Electrical Engineering and Computer Science, Graduate School of Engineering, Nagoya University, Furo-cho, Nagoya-shi, Aichi 464-8603, Japan
来源：
Journal of Applied Physics | 2006年 / 100卷 / 09期
关键词：
Silicon compounds;
D O I：
暂无
中图分类号：
学科分类号：
摘要：
Journal article (JA)
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