Heteroepitaxial growth of GaAs on (100) Ge/Si using migration enhanced epitaxy

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作者：
Tanoto, H. [1 ]
Yoon, S.F. [1 ,2 ]
Loke, W.K. [1 ]
Chen, K.P. [1 ,2 ]
Fitzgerald, E.A. [3 ,4 ]
Dohrman, C. [3 ]
Narayanan, B. [5 ]
机构：
[1] School of Electrical and Electronic Engineering, Nanyang Technological University, Nanyang Avenue, Singapore 639798, Singapore
[2] Singapore-MIT Alliance, Nanyang Drive, Singapore 637460, Singapore
[3] Department of Materials Science and Engineering, Massachusetts Institute of Technology, Cambridge, MA 02139, United States
[4] Singapore-MIT Alliance, Massachusetts Avenue, Cambridge, MA 02139, United States
[5] Institute of Microelectronics, Singapore Science Park II, Singapore 117685, Singapore
来源：
Journal of Applied Physics | 2008年 / 103卷 / 10期
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