Etching process of back-illuminated ZnO ultraviolet focal plane array imagers

被引：0

作者：

Department of Electronic Science and Technology, Xi'an Jiaotong University, Xi'an 710049, China ^{[1
]}

机构：

来源：

Pan Tao Ti Hsueh Pao | 2008年 / 12卷 / 2304-2306期

关键词：

II-VI semiconductors - Zinc oxide - Chlorine compounds - Focusing - Nitrogen compounds;

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暂无

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摘要：

Etching process of back-illuminated ZnO ultraviolet focal plane array imagers was investigated. The etching result of 128 × 128 array, in which the area of unit cell was 25m × 25m, was studied. The profile angle was approximately 80. There was a linear relationship between the etching depth and the etching time. The dependence of etching rate on NH4Cl solution concentration was also studied. The photoresponsivity of the array's unit cells was measured. The UV-to-visible rejection ratio was around 60:1. ©2008 Chinese Institute of Electronics.

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