Theoretical and Experimental Study of Resistive Thin Film for Application in Resistive Wall Amplifiers

被引：0

作者：

Yue, Ouyang ^{[1
]}

Yin, Hairong ^{[1
]}

Cai, Jinchi ^{[1
]}

Yin, Pengcheng ^{[1
]}

Jia, Dongdong ^{[1
]}

Fan, Wuyang ^{[1
]}

Xu, Jin ^{[1
]}

Yue, Lingna ^{[1
]}

Xu, Yong ^{[1
]}

Wang, Wenxiang ^{[1
]}

Wei, Yanyu ^{[1
]}

He, Jun ^{[2
]}

Wang, Hailong ^{[3
]}

机构：

[1] Univ Elect Sci & Technol China, Sch Elect Sci & Engn, Chengdu 610000, Peoples R China

[2] Chinese Acad Sci, Aerosp Informat Res Inst, Beijing 100094, Peoples R China

[3] Southwest China Res Inst Elect Equipment, Chengdu 610036, Peoples R China

来源：

ACS APPLIED ELECTRONIC MATERIALS | 2024年 / 6卷 / 12期

基金：

中国国家自然科学基金;

关键词：

resistive wall amplifiers; space charge field; magnetron sputtering; thin films; ZnO; Hall effect; WAVES; BEAMS;

D O I：

10.1021/acsaelm.4c01486

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

In this paper, the electrical characteristics of resistive thin films and the amplification properties of resistive wall amplifiers are studied based on large signal theory. To optimize amplification performance and reduce interaction length, different frequency bands and operating voltages require films with different electrical properties and thicknesses and a reasonable distribution of the respective lengths of the resistive walls and slow-wave structures. To obtain ZnO x thin films with the required conductivities and thicknesses, reactive DC magnetron sputtering was employed. By controlling the partial pressure of oxygen and the annealing temperature during the preparation process, it is possible to control the number of oxygen deficiencies in the material and the quality of crystallization, which significantly influence the electrical properties. The experiments provide a parameter reference for the preparation of resistive films for millimeter-wave frequency band resistive wall amplifiers.

引用

页码：8798 / 8803

页数：6

共 50 条

[21] Resistive state of a superconducting thin film with rough surface
Barba-Ortega, J.
Achic, H. B.
Joya, M. R.
PHYSICA C-SUPERCONDUCTIVITY AND ITS APPLICATIONS, 2019, 561 (9-12): : 9 - 12
[22] DESIGN OF PRECISION THIN-FILM RESISTIVE NETWORKS
BREDENKAMP, GL
MICROELECTRONICS RELIABILITY, 1974, 13 (01) : 49 - +
[23] Enhanced electrothermal pumping with thin film resistive heaters
Williams, Stuart J.
ELECTROPHORESIS, 2013, 34 (9-10) : 1400 - 1406
[24] DESIGN AND FABRICATION OF THIN-FILM RESISTIVE SQUIDS
KRIVOY, GS
ASSMANN, C
PETERS, M
KOCH, H
JOURNAL OF LOW TEMPERATURE PHYSICS, 1995, 99 (1-2) : 107 - 120
[25] MEASUREMENT OF RESISTIVE TRANSITION TO SUPERCONDUCTIVITY IN THIN ALUMINUM FILM
BHATNAGA.AK
KAHN, P
ZAMMIT, TJ
SOLID STATE COMMUNICATIONS, 1970, 8 (02) : 79 - +
[26] Investigation on resistive switching characteristics of ZnO thin film
Wei, Min
Yang, Fan
Li, Chunfu
Deng, Hong
Wen, Guangjun
NANOEPITAXY: MATERIALS AND DEVICES VI, 2014, 9174
[27] A THEORETICAL INVESTIGATION OF A THIN-FILM MAGNETO-RESISTIVE INFORMATION READER IN A CMD MEMORY
BERESNEV, VI
NIKITIN, AV
FILIPPOV, BN
CHRISTOPOLOVA, NN
SOVIET MICROELECTRONICS, 1989, 18 (02): : 104 - 108
[28] Resistive transitions of thin film superconductors in a magnetic field
Theunissen, MH
Kes, PH
PHYSICAL REVIEW B, 1997, 55 (22) : 15183 - 15190
[29] Resistive transitions of thin film superconductors in a magnetic field
Theunissen, M. H.
Kes, P. H.
Physical Review B: Condensed Matter, 55 (22):
[30] Resistive switching and memory effects of AgI thin film
Liang, X. F.
Chen, Y.
Shi, L.
Lin, J.
Yin, J.
Liu, Z. G.
JOURNAL OF PHYSICS D-APPLIED PHYSICS, 2007, 40 (16) : 4767 - 4770

← 1 2 3 4 5 →