Thickness effects on pH response of HfO2 sensing dielectric improved by rapid thermal annealing

被引：0
|
作者：
Lai, Chao-Sung [1 ]
Yang, Chia-Ming [1 ]
Lu, Tseng-Fu [1 ]
机构：
[1] Department of Electronic Engineering, Chang Gung University, 259 Wen-Hwa 1st Road, Kwei-Shan, Tao-Yuan, Taiwan
来源：
Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers | 2006年 / 45卷 / 4 B期
关键词：
D O I：
暂无
中图分类号：
学科分类号：
摘要：
Journal article (JA)
引用
收藏
页码：3807 / 3810
相关论文
共 50 条
  • [1] Thickness effects on pH response of HfO2 sensing dielectric improved by rapid thermal annealing
    Lai, CS
    Yang, CM
    Lu, TF
    JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS, 2006, 45 (4B): : 3807 - 3810
  • [2] Effects of Thickness Effect and Rapid Thermal Annealing on pH Sensing Characteristics of Thin HfO2 Films Formed by Atomic Layer Deposition
    Lu, Tseng-Fu
    Chuang, Hao-Chun
    Wang, Jer-Chyi
    Yang, Chia-Ming
    Kuo, Pei-Chun
    Lai, Chao-Sung
    JAPANESE JOURNAL OF APPLIED PHYSICS, 2011, 50 (10)
  • [3] Effects of thermal annealing on the charge localization characteristics of HfO2/Au/HfO2 stack
    Feng, Xuan
    Dong, Shurong
    Wong, Hei
    Yu, Danqun
    Pey, K. L.
    Shubhakar, K.
    Lau, W. S.
    MICROELECTRONICS RELIABILITY, 2016, 61 : 78 - 81
  • [4] In Situ Characterization of Ferroelectric HfO2 During Rapid Thermal Annealing
    Narasimhan, Vijay Kris
    McBriarty, Martin E.
    Passarello, Donata
    Adinolfi, Valerio
    Toney, Michael F.
    Mehta, Apurva
    Littau, Karl A.
    PHYSICA STATUS SOLIDI-RAPID RESEARCH LETTERS, 2021, 15 (05):
  • [5] Determining relatively fully effects of rapid thermal annealing on structure and electrical characteristics of HfO2 high k dielectric films
    Tan, Tingting
    Liu, Zhengtang
    Liu, Wenting
    Xibei Gongye Daxue Xuebao/Journal of Northwestern Polytechnical University, 2010, 28 (04): : 511 - 514
  • [6] Influence of Rapid Thermal Annealing on the Structure and Electrical Properties of Ce-Doped HfO2 Gate Dielectric
    Meng Yong-Qiang
    Liu Zheng-Tang
    Feng Li-Ping
    Chen Shuai
    CHINESE PHYSICS LETTERS, 2014, 31 (07)
  • [7] Physicochemical properties of HfO2 in response to rapid thermal anneal
    Lysaght, PS
    Foran, B
    Bersuker, G
    Chen, PJJ
    Murto, RW
    Huff, HR
    APPLIED PHYSICS LETTERS, 2003, 82 (08) : 1266 - 1268
  • [8] Growth and thermal annealing of Cu on HfO2
    Park, HJ
    Sun, YM
    Troiani, H
    Santiago, P
    Yacaman, MJ
    White, JM
    SURFACE SCIENCE, 2002, 521 (1-2) : 1 - 9
  • [9] Effects of annealing and ar ion bombardment on the removal of HfO2 gate dielectric
    Chen, JH
    Yoo, WJ
    Chan, DSH
    Kwong, DL
    ELECTROCHEMICAL AND SOLID STATE LETTERS, 2004, 7 (03) : F18 - F20
  • [10] Effects of Microwave Annealing on High-k Dielectric HfO2 Thin Films
    Kang, Min-Soo
    Cho, Won-Ju
    JOURNAL OF NANOSCIENCE AND NANOTECHNOLOGY, 2019, 19 (10) : 6232 - 6238
12345