Superconductivity without dependence on valence electron density in (Al, Zn, Co) doped YBCO systems

被引:0
|
作者
Zhang, Yufeng [1 ]
Wang, Dandan [2 ]
Li, Pinglin [2 ]
机构
[1] Department of Mathematics and Physics, Shanghai University of Electric Power, 28 Xuehai Road, Nanhui District, Shanghai 201300, China
[2] School of Physics and Engineering, Zhengzhou University, Zhengzhou 450052, China
来源
Fizika Nizkikh Temperatur (Kharkov) | 2010年 / 36卷 / 02期
关键词
D O I
暂无
中图分类号
学科分类号
摘要
引用
收藏
页码:206 / 211
相关论文
共 50 条
  • [11] Improved critical current density in Zn doped YBCO single crystals
    Hussain, Manzoor
    Takita, Koki
    PHYSICA C-SUPERCONDUCTIVITY AND ITS APPLICATIONS, 2010, 470 (04): : 291 - 294
  • [12] Unconventional Superconductivity in Low Density Electron Systems and Conventional Superconductivity in Hydrogen Metallic Alloys
    Kagan, M. Yu.
    JETP LETTERS, 2016, 103 (11) : 728 - 738
  • [13] Unconventional superconductivity in low density electron systems and conventional superconductivity in hydrogen metallic alloys
    M. Yu. Kagan
    JETP Letters, 2016, 103 : 728 - 738
  • [14] Angular dependence of critical current density in Ca-doped YBCO epitaxial thin films
    Augieri, A.
    Celentano, G.
    Ciontea, L.
    Halbritter, J.
    Galluzzi, V.
    Gambardella, U.
    Mancini, A.
    Petrisor, T.
    Rufoloni, A.
    Vannozzi, A.
    LOW TEMPERATURE PHYSICS, PTS A AND B, 2006, 850 : 483 - +
  • [15] Valence transition model of the pseudogap, charge order, and superconductivity in electron-doped and hole-doped copper oxides
    Mazumdar, Sumit
    PHYSICAL REVIEW B, 2018, 98 (20)
  • [16] Suppression of superconductivity due to spin imbalance in Co/Al/Co single electron transistor
    Johansson, J
    Urech, M
    Haviland, D
    Korenivski, V
    JOURNAL OF APPLIED PHYSICS, 2003, 93 (10) : 8650 - 8652
  • [17] Superconductivity of Electron-Doped NdOBiS2 by Substitution of Mixed-Valence Ce Ions
    Kase, Naoki
    Matsumoto, Masaya
    Kondo, Katsuo
    Gouchi, Jun
    Uwatoko, Yoshiya
    Sakakibara, Toshiro
    Miyakawa, Nobuaki
    JOURNAL OF THE PHYSICAL SOCIETY OF JAPAN, 2019, 88 (10)
  • [18] DEPENDENCE OF ELECTRON-MOBILITY IN MODULATION-DOPED GAAS-(ALGA)AS HETEROJUNCTION INTERFACES ON ELECTRON-DENSITY AND AL CONCENTRATION
    STORMER, HL
    GOSSARD, AC
    WIEGMANN, W
    BALDWIN, K
    APPLIED PHYSICS LETTERS, 1981, 39 (11) : 912 - 914
  • [19] Dependence of metal surface properties on the valence-electron density in the stabilized jellium model
    Brajczewska, M
    Henriques, C
    Fiolhais, C
    VACUUM, 2001, 63 (1-2) : 135 - 138
  • [20] Dielectric behavior in nanocrystalline Al doped Co-Zn ferrite
    Alone, S. T.
    Shirsath, Sagar E.
    Kadam, R. H.
    Mane, D. R.
    Jadhav, K. M.
    OPTOELECTRONICS AND ADVANCED MATERIALS-RAPID COMMUNICATIONS, 2009, 3 (11): : 1200 - 1203