Transition region study of SiO2/4H-SiC interface by ADXPS

被引:0
|
作者
School of Electronic and Information Engineering, Dalian University of Technology, Dalian 116024, China [1 ]
机构
来源
Pan Tao Ti Hsueh Pao | 2008年 / 5卷 / 944-949期
关键词
D O I
暂无
中图分类号
学科分类号
摘要
引用
收藏
相关论文
共 50 条
  • [21] Characterization of SiO2/4H-SiC Interfaces in 4H-SiC MOSFETs: A Review
    Fiorenza, Patrick
    Giannazzo, Filippo
    Roccaforte, Fabrizio
    ENERGIES, 2019, 12 (12)
  • [22] Hall mobility and free electron density at the SiC/SiO2 interface in 4H-SiC
    Saks, NS
    Agarwal, AK
    APPLIED PHYSICS LETTERS, 2000, 77 (20) : 3281 - 3283
  • [23] Interface trap profile near the band edges at the 4H-SiC/SiO2 interface
    Saks, NS
    Mani, SS
    Agarwal, AK
    APPLIED PHYSICS LETTERS, 2000, 76 (16) : 2250 - 2252
  • [24] Passivation and depassivation of interface traps at the SiO2/4H-SiC interface by potassium ions
    Hermannsson, Petur Gordon
    Sveinbjornsson, Einar O.
    SILICON CARBIDE AND RELATED MATERIALS 2011, PTS 1 AND 2, 2012, 717-720 : 761 - 764
  • [25] Direct Observation of Energy Distribution of Interface States at SiO2/4H-SiC Interface
    Yamashita, Y.
    Hasunuma, R.
    Nagata, T.
    Chikyow, T.
    GALLIUM NITRIDE AND SILICON CARBIDE POWER TECHNOLOGIES 6, 2016, 75 (12): : 207 - 211
  • [26] Kinetics of NO nitridation in SiO2/4H-SiC
    Feldman, L.C. (leonard.c.feldman@vanderbilt.edu), 1600, American Institute of Physics Inc. (93):
  • [27] Kinetics of NO nitridation in SiO2/4H-SiC
    McDonald, K
    Feldman, LC
    Weller, RA
    Chung, GY
    Tin, CC
    Williams, JR
    JOURNAL OF APPLIED PHYSICS, 2003, 93 (04) : 2257 - 2261
  • [28] 4H-SiC/SiO2 Interface Degradation in 1.2 kV 4H-SiC MOSFETs Due to Power Cycling Tests
    Yoo, Dahui
    Kim, Mijin
    Kang, Inho
    Lee, Ho-Jun
    ELECTRONICS, 2024, 13 (07)
  • [29] The influence of excess nitrogen, on the electrical properties of the 4H-SiC/SiO2 interface
    Pintilie, I.
    Moscatelli, F.
    Nipoti, R.
    Poggi, A.
    Solmi, S.
    Lovlie, L. S.
    Svensson, B. G.
    SILICON CARBIDE AND RELATED MATERIALS 2010, 2011, 679-680 : 326 - +
  • [30] Two-dimensional defect mapping of the SiO2/4H-SiC interface
    Woerle, Judith
    Johnson, Brett C.
    Bongiorno, Corrado
    Yamasue, Kohei
    Ferro, Gabriel
    Dutta, Dipanwita
    Jung, Thomas A.
    Sigg, Hans
    Cho, Yasuo
    Grossner, Ulrike
    Camarda, Massimo
    PHYSICAL REVIEW MATERIALS, 2019, 3 (08):