Resonant detection of terahertz radiation utilizing plasma waves in high-electron-mobility transistors

被引：8
|
作者：
State Key Laboratory of Functional Materials for Informatics, Graduate School of Chinese Academy of Sciences, Chinese Academy of Sciences, Shanghai 200050, China [1 ]
机构：
来源：
Chin. Phys. | 2008年 / 5卷 / 1854-1857期
关键词：
Electromagnetic wave emission - Terahertz waves - Plasma oscillations - Electron mobility;
D O I：
10.1088/1674-1056/17/5/051
中图分类号：
学科分类号：
摘要：
This paper theoretically studies the high-electron-mobility transistor (HEMT) driven by the terahertz radiation. It calculates the gate-to-source/drain admittance and the detection responsivity of the HEMT as a function of the signal frequency. It finds that the peaks of the admittances and the responsivity show redshift, and the heights of the peaks decrease with increasing the lengths of the source-to-gate and gate-to-drain spacing. Such phenomena may be useful in designing different HEMTs by utilizing the effects associated with the plasma oscillations excitation. © 2008 Chin. Phys. Soc. and IOP Publishing Ltd.
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