Resonant detection of terahertz radiation utilizing plasma waves in high-electron-mobility transistors

被引：8

作者：

State Key Laboratory of Functional Materials for Informatics, Graduate School of Chinese Academy of Sciences, Chinese Academy of Sciences, Shanghai 200050, China ^{[1
]}

机构：

来源：

Chin. Phys. | 2008年 / 5卷 / 1854-1857期

关键词：

Electromagnetic wave emission - Terahertz waves - Plasma oscillations - Electron mobility;

D O I：

10.1088/1674-1056/17/5/051

中图分类号：

学科分类号：

摘要：

This paper theoretically studies the high-electron-mobility transistor (HEMT) driven by the terahertz radiation. It calculates the gate-to-source/drain admittance and the detection responsivity of the HEMT as a function of the signal frequency. It finds that the peaks of the admittances and the responsivity show redshift, and the heights of the peaks decrease with increasing the lengths of the source-to-gate and gate-to-drain spacing. Such phenomena may be useful in designing different HEMTs by utilizing the effects associated with the plasma oscillations excitation. © 2008 Chin. Phys. Soc. and IOP Publishing Ltd.

引用

共 50 条

[1] Resonant detection of terahertz radiation utilizing plasma waves in high-electron-mobility transistors
马明瑞
陈钰玲
王立敏
王长
Chinese Physics B, 2008, 17 (05) : 1854 - 1857
[2] Resonant detection of terahertz radiation utilizing plasma waves in high-elect ron-mobility transistors
Ma Ming-Rui
Chen Yu-Ling
Wang Li-Min
Wang Chang
CHINESE PHYSICS B, 2008, 17 (05) : 1854 - 1857
[3] Plasma and transit-time mechanisms of the terahertz radiation detection in high-electron-mobility transistors
Satou, A
Khmyrova, I
Ryzhii, V
Shur, MS
SEMICONDUCTOR SCIENCE AND TECHNOLOGY, 2003, 18 (06) : 460 - 469
[4] Resonant detection of modulated terahertz radiation in micromachined high-electron-mobility transistor
Ryzhii, V.
Ryzhii, M.
Hu, Y.
Hagiwara, I.
Shur, M. S.
APPLIED PHYSICS LETTERS, 2007, 90 (20)
[5] Resonant detection and frequency multiplication of terahertz radiation utilizing plasma waves in resonant-tunneling transistors
1600, American Institute of Physics Inc. (88):
[6] Resonant detection and frequency multiplication of terahertz radiation utilizing plasma waves in resonant-tunneling transistors
Ryzhii, V
Khmyrova, I
Shur, M
JOURNAL OF APPLIED PHYSICS, 2000, 88 (05) : 2868 - 2871
[7] Terahertz spectroscopy of plasma waves in high electron mobility transistors
Nouvel, P.
Marinchio, H.
Torres, J.
Palermo, C.
Gasquet, D.
Chusseau, L.
Varani, L.
Shiktorov, P.
Starikov, E.
Gruzinskis, V.
JOURNAL OF APPLIED PHYSICS, 2009, 106 (01)
[8] Terahertz Imaging with InP High-electron-mobility Transistors
Watanabe, Takayuki
Akagawa, Keisuke
Tanimoto, Yudai
Coquillat, Dominique
Knap, Wojciech
Otsuji, Taiichi
TERAHERTZ PHYSICS, DEVICES, AND SYSTEMS V: ADVANCE APPLICATIONS IN INDUSTRY AND DEFENSE, 2011, 8023
[9] Terahertz generation and detection by plasma waves in nanometer gate high electron mobility transistors
Knap, W
Lusakowski, J
Teppe, F
Dyakonova, N
Meziani, Y
ACTA PHYSICA POLONICA A, 2005, 107 (01) : 82 - 91
[10] Radiation effects in high-electron-mobility transistors
Rengevich, AE
TECHNICAL PHYSICS LETTERS, 1999, 25 (04) : 317 - 318

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