Study of defects evolution in GaN layers grown by metal-organic chemical vapor deposition

被引：0

作者：

Jang, J.H. ^{[1
]}

Herrero, A.M. ^{[1
]}

Gila, B. ^{[1
]}

Abernathy, C. ^{[1
]}

Craciun, V. ^{[1
]}

机构：

[1] Department of Materials Science and Engineering, University of Florida, P.O. Box 116400, Gainesville, FL 32611, United States

来源：

Journal of Applied Physics | 2008年 / 103卷 / 06期

关键词：

32;

D O I：

暂无

中图分类号：

学科分类号：

摘要：

Journal article (JA)

引用

共 50 条

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