Study of defects evolution in GaN layers grown by metal-organic chemical vapor deposition

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作者：
Jang, J.H. [1 ]
Herrero, A.M. [1 ]
Gila, B. [1 ]
Abernathy, C. [1 ]
Craciun, V. [1 ]
机构：
[1] Department of Materials Science and Engineering, University of Florida, P.O. Box 116400, Gainesville, FL 32611, United States
来源：
Journal of Applied Physics | 2008年 / 103卷 / 06期
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