Thin crystalline 3C-SiC layer growth through carbonization of differently oriented Si substrates

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作者：
Severino, A. [1 ,2 ]
D'Arrigo, G. [1 ]
Bongiorno, C. [1 ]
Scalese, S. [1 ]
La Via, F. [1 ]
Foti, G. [2 ]
机构：
[1] IMM-CNR Sezione di Catania, Stradale Primosole 50, 95121, Catania, Italy
[2] Physics Department, University of Catania, Via Santa Sofia 64, 95100, Catania, Italy
来源：
Journal of Applied Physics | 2007年 / 102卷 / 02期
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