Properties of LaAlO film after waterless process using organic solvent containing anhydrous hydrofluoric acid

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Department of Electrical Electronic and Information Engineering, Osaka University, 2-1 Yamadaoka, Suita, Osaka 565-0871, Japan [1 ]
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Jpn. J. Appl. Phys. | 1600年 / 4 PART 2卷
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Compilation and indexing terms; Copyright 2025 Elsevier Inc;
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摘要：
Gate dielectrics - Sodium Aluminate - Water absorption - Oxide films - Etching - Silica - Dielectric materials - Hydrofluoric acid - Silicates
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