共 33 条
- [12] SiGe and CMOS Technology for State-of-the-Art Millimeter-Wave Transceivers [J]. IEEE ACCESS, 2023, 11 : 55596 - 55617
- [14] A 34-110 GHz Wideband, Asymmetric, Broadside-Coupled Marchand Balun in 180 nm SiGe BiCMOS Technology [J]. 2014 IEEE MTT-S INTERNATIONAL MICROWAVE SYMPOSIUM (IMS), 2014,
- [15] A 220-330 GHz Wideband, Low-Loss and Small Marchand Balun with Ground Shields in SiGe BiCMOS Technology [J]. 2021 IEEE MTT-S INTERNATIONAL MICROWAVE AND RF CONFERENCE (IMARC), 2021,
- [16] On-Chip Antennas in SiGe BiCMOS Technology: Challenges, State of the art and Future Directions [J]. 2018 ASIA-PACIFIC MICROWAVE CONFERENCE PROCEEDINGS (APMC), 2018, : 621 - 623
- [17] Analog/mmWave Circuit Demonstrations in state-of-the-art SiGe BiCMOS process for 5G and Optical Transceivers [J]. 2023 IEEE BICMOS AND COMPOUND SEMICONDUCTOR INTEGRATED CIRCUITS AND TECHNOLOGY SYMPOSIUM, BCICTS, 2023, : 90 - 93
- [18] An ultra-wideband low power consumption differential low noise amplifier in SiGe:C BiCMOS technology [J]. 2006 IEEE RADIO AND WIRELESS SYMPOSIUM, PROCEEDINGS, 2006, : 107 - 110
- [19] Low Phase Imbalance D-Band Balun Using 130-nm SiGe BiCMOS Process Suitable for Broadband Differential Circuits [J]. 2019 PHOTONICS & ELECTROMAGNETICS RESEARCH SYMPOSIUM - SPRING (PIERS-SPRING), 2019, : 3869 - 3873
- [20] A New 8 GHz differential 120° Tunable active phase shifter integrated in a 0.25 μm BiCMOS SiGe:C technology [J]. 2019 26TH IEEE INTERNATIONAL CONFERENCE ON ELECTRONICS, CIRCUITS AND SYSTEMS (ICECS), 2019, : 310 - 313