Effect of hydrostatic pressure on the current-voltage characteristics of GaN/AlGaN/GaN heterostructure devices

被引：0
|
作者：
Liu, Y. [1 ]
Kauser, M.Z. [1 ]
Schroepfer, D.D. [1 ]
Ruden, P.P. [1 ]
Xie, J. [2 ]
Moon, Y.T. [2 ]
Onojima, N. [2 ]
Morko¸, H. [2 ]
Son, K.-A. [3 ]
Nathan, M.I. [4 ]
机构：
[1] Department of Electrical and Computer Engineering, University of Minnesota, Minneapolis, MN 55455
[2] Department of Electrical Engineering, Virginia Commonwealth University, Richmond, VA 23284
[3] Jet Propulsion Laboratory, 4800 Oak Grove Drive, Pasadena, CA 91109
[4] IBM T. J. Watson Research Center, Yorktown Heights, NY 10598
来源：
Journal of Applied Physics | 2006年 / 99卷 / 11期
关键词：
Heterojunctions;
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摘要：
Journal article (JA)
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