Error Analysis and Improvement Method of Rogoswski Coil in Current Measurement of internal Chips in Press-pack IGBT Devices

被引：0
|
作者：
Peng C. [1 ]
Li X. [1 ]
Gu M. [1 ]
Zhao Z. [1 ]
Tang X. [2 ]
Cui X. [1 ]
机构：
[1] State Key Laboratory of Alternate Electrical Power System with Renewable Energy Sources, North China Electric Power University, Changping District, Beijing
[2] State Key Laboratory of Advanced Power Transmission Technology, Global Energy Interconnection Research Institute Co., Ltd., Changping District, Beijing
来源：
Zhongguo Dianji Gongcheng Xuebao/Proceedings of the Chinese Society of Electrical Engineering | 2020年 / 40卷 / 22期
基金：
中国国家自然科学基金;
关键词：
Current measurement; Error analytical formula; Error model; Press-pack IGBT chip; Rogoswski coil;
D O I：
10.13334/j.0258-8013.pcsee.192021
中图分类号：
学科分类号：
摘要：
The parallel use of Press-pack Insulated Gate Bipolar Transistor (IGBT) chip is an important means to improve the current level of IGBT devices. However, the current imbalance between the chips limits the maximum rated current of the device. It is usually necessary to evaluate degree of current imbalance by means of experimental testing, but one of the difficulties is how to accurately measure the current in the internal chip of Press-pack IGBT device. Rogoswski coil is the main means of current measurement in IGBT devices because of its advantages of flexibility, non-saturation and non-embedment. Previous studies have shown that there is a large error in measuring the chip current by the Rogoswski coil in the IGBT device. This paper is based on the special application of Rogoswski coil to measure the chip current in Press-pack IGBT devices. Firstly, the causes of current measurement error were analyzed. Secondly, the error model of Rogoswski coil was established and the error analytical formula was derived. Then, two methods to reduce measurement error were proposed. Finally, the effectiveness of the analytical formula of error and the method of reducing measurement error were verified by experiments. © 2020 Chin. Soc. for Elec. Eng.
引用
收藏
页码：7388 / 7397
页数：9
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