Electrical characteristics of epitaxial γ-Al2O 3/Si for quantum tunneling device

被引：0
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作者：
Kim, Jang-Seop [1 ]
Shahjahan, Mohammad [2 ]
Mosammat, Halima Khatun [1 ]
Sawada, Kazuaki [1 ,3 ]
Ishida, Makoto [1 ,3 ]
机构：
[1] Department of Electrical and Electronic Engineering, Toyohashi University of Technology, 1-1 Hibarigaoka, Tempaku-cho, Toyohashi, Aichi 441-8580, Japan
[2] Venture Business Laboratory, Toyohashi University of Technology, 1-1 Hibarigaoka, Tempaku-cho, Toyohashi, Aichi 441-8580, Japan
[3] Japan Science and Technology Agency-Core Research for Evolutional Science and Technology (JST-CREST)
来源：
Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers | 2006年 / 45卷 / 6 A期
关键词：
The characteristics of epitaxial γ-Al2O3 film deposited by molecular beam epitaxy (MBE) on a Si substrate have been studied for its application to quantum devices with different thicknesses. The epitaxial growth properties and surface morphology of the film were studied by in situ reflection high-energy electron diffraction (RHEED) and atomic force microscopy (AFM). Epitaxial γ-Al2O3 films on Si substrates with film thicknesses ranging from 2 to 10nm exhibited an appropriate surface flatness. We observed that the epitaxial γ-Al 2O3 films exhibit appropriate dielectric properties (6-12 MV/cm) and very low leakage currents. From the electrical characteristics; we observed Fowler-Nordheim (F-N) tunneling phenomena with a large band offset. The same properties in thick epitaxial γ-Al2O3 films may be suitable for quantum tunneling applications. © 2006 The Japan Society of Applied Physics;
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页码：5107 / 5109
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