共 50 条
- [1] A 4H-SiC JFET with a monolithically integrated temperature sensor Power Electron. Devices Compon.,
- [2] Simulation of a Novel Integrated 4H-SiC Temperature Sensor 2018 14TH IEEE INTERNATIONAL CONFERENCE ON SOLID-STATE AND INTEGRATED CIRCUIT TECHNOLOGY (ICSICT), 2018, : 208 - 210
- [3] High Temperature Characteristics of 4H-SiC RESURF-type JFET SILICON CARBIDE AND RELATED MATERIALS 2008, 2009, 615-617 : 727 - 730
- [4] Room Temperature Radiation Testing of a 500 °C Durable 4H-SiC JFET Integrated Circuit Technology 2019 IEEE RADIATION EFFECTS DATA WORKSHOP (REDW), 2019, : 215 - 221
- [5] A Vertical SiC JFET with a Monolithically Integrated JBS Diode 2009 21ST INTERNATIONAL SYMPOSIUM ON POWER SEMICONDUCTOR DEVICES & ICS, 2009, : 255 - 258
- [8] Optimisation of a 4H-SiC enhancement mode power JFET SILICON CARBIDE AND RELATED MATERIALS - 2002, 2002, 433-4 : 777 - 780