Development and prospect of SiC power devices in power grid

Silicon Carbide (SiC) is a wide-bandgap semiconductor that has drawn significant research interests in recent years for its superior physical and electrical properties, such as larger bandgap, high breakdown electric field, high electron saturation velocity and high thermal conductivity. The paper introduces the developments of Silicon Carbide power devices in power grid, including the SiC PiN diodes, SiC-MOSFETs, SiC-IGBTs and SiC Thyristors. The perspectives of SiC power electronic devices in power grid are also proposed. The speedy growth of high power and high current SiC devices will have a strong impact on the development of power grid. © 2012 Chin. Soc. for Elec. Eng.