Nanoindentation of Mg-doped AlGaN thin films

被引:0
|
作者
机构
[1] Huang, Chih-Yen
[2] Hsieh, Pei-Ju
[3] Chen, I-Chen
[4] Ke, Wen-Cheng
[5] Yang, Ping-Feng
[6] Jian, Sheng-Rui
来源
Jian, S.-R. (srjian@gmail.com) | 1600年 / Elsevier Ltd卷 / 593期
关键词
The effects of Mg-containing precursor flow rate on the nanomechanical characteristics of the Mg-doped AlGaN thin films are investigated by using nanoindentation technique. The Mg-doped AlGaN thin films were deposited on sapphire substrates by metal-organic chemical-vapor deposition (MOCVD) with the various flow rates of 100; 200 and 600 sccm of bis-(cyclopentadienyl)-magnesium (Cp2Mg) precursor. Nanoindentation results revealed apparent discontinuities (so-called multiple pop-ins) in the load-displacement curves; while no discontinuity was observed in the unloading segment of the load-displacement curves. The hardness and Young's modulus of Mg-doped AlGaN thin films measured by a Berkovich nanoindenter operated with the continuous contact stiffness measurements (CSM) method indicated that both mechanical properties increased with increasing the Mg concentration with the hardness and the Young's modulus being increased from 20.62 ± 0.53 to 24.17 ± 0.72 GPa and from 317.48 ± 7.82 to 364.63 ± 17.62 GPa; respectively; as the Mg concentration raised from 100 to 600 sccm. © 2013 Elsevier B.V. All rights reserved;
D O I
暂无
中图分类号
学科分类号
摘要
Journal article (JA)
引用
收藏
相关论文
共 50 条
  • [31] Preparation and characterization of Mg-doped ZnO thin films by sol-gel method
    Huang, Kai
    Tang, Zhen
    Zhang, Li
    Yu, Jiangyin
    Lv, Jianguo
    Liu, Xiansong
    Liu, Feng
    APPLIED SURFACE SCIENCE, 2012, 258 (08) : 3710 - 3713
  • [32] Analytical investigation of activation energy for Mg-doped p-AlGaN
    Md. Soyaeb Hasan
    Ibrahim Mustafa Mehedi
    S. M. Faruk Reza
    Md Rejvi Kaysir
    Md Rafiqul Islam
    Optical and Quantum Electronics, 2020, 52
  • [33] Microstructural studies and electrical properties of Mg-doped SrTiO3 thin films
    Okhay, O.
    Wu, A.
    Vilarinho, P. M.
    Reaney, I. M.
    Ramos, A. R. L.
    Alves, E.
    Petzelt, J.
    Pokorny, J.
    ACTA MATERIALIA, 2007, 55 (15) : 4947 - 4954
  • [34] Carrier transport properties of Mg-doped InAlN films
    Kim, S.
    Kim, H. J.
    Choi, S.
    Lochner, Z.
    Ryou, J. -H.
    Dupuis, R. D.
    Kim, H.
    ELECTRONICS LETTERS, 2012, 48 (20) : 1285 - +
  • [35] Improvement of p-Type AlGaN Conductivity with an Alternating Mg-Doped/Un-Doped AlGaN Layer Structure
    Chen, Chi-Chung
    Lin, Yu-Ren
    Lin, Yu-Wei
    Su, Yu-Cheng
    Chen, Chung-Chi
    Huang, Ting-Chun
    Wu, Ping-Hsiu
    Yang, C. C.
    Mou, Shin
    Averett, Kent L.
    MICROMACHINES, 2021, 12 (07)
  • [36] Mg acceptor activation mechanism and hole transport characteristics in highly Mg-doped AlGaN alloys
    徐庆君
    张士英
    刘斌
    李振华
    陶涛
    谢自力
    修向前
    陈敦军
    陈鹏
    韩平
    王科
    张荣
    郑有炓
    Chinese Physics B, 2020, (05) : 614 - 618
  • [37] Mg acceptor activation mechanism and hole transport characteristics in highly Mg-doped AlGaN alloys
    Xu, Qing-Jun
    Zhang, Shi-Ying
    Liu, Bin
    Li, Zhen-Hua
    Tao, Tao
    Xie, Zi-Li
    Xiu, Xiang-Qian
    Chen, Dun-Jun
    Chen, Peng
    Han, Ping
    Wang, Ke
    Zhang, Rong
    Zheng, You-Liao
    CHINESE PHYSICS B, 2020, 29 (05)
  • [38] Heavily Mg-doped hexagonal phase thin ZnO films prepared by pulsed laser deposition
    Zhu, De-Liang
    Chen, Ji-Xing
    Cao, Pei-Jiang
    Jia, Fang
    Liu, Wen-Jun
    Ma, Xiao-Cui
    Lu, You-Ming
    Faguang Xuebao/Chinese Journal of Luminescence, 2010, 31 (02): : 223 - 226
  • [39] SILAR-coated Mg-doped ZnO thin films for ammonia vapor sensing applications
    Devi, K. Radhi
    Selvan, G.
    Karunakaran, M.
    Kasirajan, K.
    Chandrasekar, L. Bruno
    Shkir, Mohd
    AlFaify, S.
    JOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICS, 2020, 31 (13) : 10186 - 10195
  • [40] Mg-Doped Hematite Nanoparticle Arrays Coated with CoPi Thin Films for Solar Water Oxidation
    Du, Qiongdie
    Guan, Yuan
    Deng, Qiankun
    Wang, Shaomang
    Li, Zhongyu
    He, Huan
    Yan, Shicheng
    ACS APPLIED NANO MATERIALS, 2023, 6 (13) : 12459 - 12469