Origin of the excitonic recombinations in hexagonal boron nitride by spatially resolved cathodoluminescence spectroscopy

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作者：
Jaffrennou, P. [1 ,2 ,3 ]
Barjon, J. [4 ]
Lauret, J.-S. [3 ]
Attal-Trétout, B. [2 ]
Ducastelle, F. [1 ]
Loiseau, A. [1 ]
机构：
[1] Laboratoire d'Etude des Microstructures, ONERA-CNRS, Boìte Postale 72, 92322 Châtillon Cedex, France
[2] Département de Mesures Physiques, ONERA, Chemin de la Hunière, 91761 Palaiseau Cedex, France
[3] Laboratoire de Photonique Quantique et Moléculaire, Institut d'Alembert, Ecole Normale Supérieure de Cachan, 61 avenue du Président Wilson, 94235 Cachan Cedex, France
[4] Groupe d'Etude de la Matière Condensée, CNRS-Université de Versailles Saint-Quentin-en-Yvelines, 1 place Aristide Briand, 92195 Meudon Cedex, France
来源：
Journal of Applied Physics | 2007年 / 102卷 / 11期
关键词：
The excitonic recombinations in hexagonal boron nitride (hBN) are investigated with spatially resolved cathodoluminescence spectroscopy in the ultraviolet range. Cathodoluminescence images of an individual hBN crystallite reveals that the 215 nm free excitonic line is quite homogeneously emitted along the crystallite; whereas the 220 and 227 nm excitonic emissions are located in specific regions of the crystallite. Transmission electron microscopy images show that these regions contain a high density of crystalline defects. This suggests that the 220 and 227 nm emissions are both produced by the recombination of excitons trapped at structural defects. © 2007 American Institute of Physics;
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