Effect of surface oxidation on electron transport in InN thin films

被引：0

作者：

Lebedev, V. ^{[1
]}

Wang, Ch.Y. ^{[1
]}

Cimalla, V. ^{[1
]}

Hauguth, S. ^{[1
]}

Kups, T. ^{[1
]}

Ali, M. ^{[1
]}

Ecke, G. ^{[1
]}

Himmerlich, M. ^{[1
]}

Krischok, S. ^{[1
]}

Schaefer, J.A. ^{[1
]}

Ambacher, O. ^{[1
]}

Polyakov, V.M. ^{[2
]}

Schwierz, F. ^{[2
]}

机构：

[1] Institute of Micro- and Nanotechnologies, Technical University Ilmenau, PB 100565, 98693 Ilmenau, Germany

[2] Department of Solid State Electronics, Technical University Ilmenau, PB 100565, 98684 Ilmenau, Germany

来源：

Journal of Applied Physics | 2007年 / 101卷 / 12期

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摘要：

Journal article (JA)

引用

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[1] Effect of surface oxidation on electron transport in InN thin films
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Ecke, G.
Himmerlich, M.
Krischok, S.
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Ambacher, O.
Polyakov, V. M.
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[2] Reduced surface electron accumulation at InN films by ozone induced oxidation
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