Characteristics of nucleation layer and epitaxy in GaN/sapphire heterostructures

被引：0
|
作者：
Narayan, J. [1 ]
Pant, Punam [1 ]
Chugh, A. [1 ]
Choi, H. [2 ]
Fan, J.C.C. [2 ]
机构：
[1] Department of Materials Science and Engineering, North Carolina State University, Raleigh, NC 27695-7907
[2] Kopin Corporation, 695 Myles Standish Boulevard, Taunton, MA 02780
来源：
Journal of Applied Physics | 2006年 / 99卷 / 05期
关键词：
Gallium nitride;
D O I：
暂无
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摘要：
Journal article (JA)
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