Delta doping and positioning effects of type II GaSb quantum dots in GaAs solar cell

被引：2
|
作者：
Asirvatham, Juanita Saroj James [1 ]
Fujita, Hiromi [2 ]
Fernández-Delgado, N. [3 ]
Herrera, M. [3 ]
Molina, S.I. [3 ]
Marshall, Andrew R. J. [1 ]
Krier, Anthony [1 ]
机构：
[1] Physics Department, Lancaster University, Lancaster,LA1 4YB, United Kingdom
[2] Magnetic Sensors Process Technology and Development Department, Asahi-Kasei Microdevices, Fuji,Shizuoka,416-8501, Japan
[3] Departamento de Ciencia de los Materiales e I.M. y Q.I., Instituto de Microscopía Electrónica y Materiales, Puerto Real,Cádiz,11510, Spain
来源：
Energy Materials: Materials Science and Engineering for Energy Systems | 2015年 / 10卷 / 04期
关键词：
All Open Access; Green;
D O I：
10.1080/14328917.2015.1115807
中图分类号：
学科分类号：
摘要：
7
引用
收藏
页码：512 / 516
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