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- [1] Flash memory device with 'I' shape floating gate for sub-70 nm NAND flash memoryJAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS, 2006, 45 (42-45): : L1200 - L1202Jung, Sang-Goo论文数: 0 引用数: 0 h-index: 0机构: Kyungpook Natl Univ, Sch Elect Engn & Comp Sci, Taegu 702701, South Korea Kyungpook Natl Univ, Sch Elect Engn & Comp Sci, Taegu 702701, South KoreaLee, Jong-Ho论文数: 0 引用数: 0 h-index: 0机构: Kyungpook Natl Univ, Sch Elect Engn & Comp Sci, Taegu 702701, South Korea Kyungpook Natl Univ, Sch Elect Engn & Comp Sci, Taegu 702701, South Korea
- [2] Hybrid Floating Gate Cell for Sub-20-nm NAND Flash Memory TechnologyIEEE ELECTRON DEVICE LETTERS, 2012, 33 (03) : 333 - 335Blomme, P.论文数: 0 引用数: 0 h-index: 0机构: IMEC, B-3001 Louvain, Belgium IMEC, B-3001 Louvain, BelgiumCacciato, A.论文数: 0 引用数: 0 h-index: 0机构: IMEC, B-3001 Louvain, Belgium IMEC, B-3001 Louvain, BelgiumWellekens, D.论文数: 0 引用数: 0 h-index: 0机构: IMEC, B-3001 Louvain, Belgium IMEC, B-3001 Louvain, BelgiumBreuil, L.论文数: 0 引用数: 0 h-index: 0机构: IMEC, B-3001 Louvain, Belgium IMEC, B-3001 Louvain, BelgiumRosmeulen, M.论文数: 0 引用数: 0 h-index: 0机构: IMEC, B-3001 Louvain, Belgium IMEC, B-3001 Louvain, BelgiumKar, G. S.论文数: 0 引用数: 0 h-index: 0机构: IMEC, B-3001 Louvain, Belgium IMEC, B-3001 Louvain, BelgiumLocorotondo, S.论文数: 0 引用数: 0 h-index: 0机构: IMEC, B-3001 Louvain, Belgium IMEC, B-3001 Louvain, BelgiumVrancken, C.论文数: 0 引用数: 0 h-index: 0机构: IMEC, B-3001 Louvain, Belgium IMEC, B-3001 Louvain, BelgiumRichard, O.论文数: 0 引用数: 0 h-index: 0机构: IMEC, B-3001 Louvain, Belgium IMEC, B-3001 Louvain, BelgiumDebusschere, I.论文数: 0 引用数: 0 h-index: 0机构: IMEC, B-3001 Louvain, Belgium IMEC, B-3001 Louvain, BelgiumVan Houdt, J.论文数: 0 引用数: 0 h-index: 0机构: IMEC, B-3001 Louvain, Belgium IMEC, B-3001 Louvain, Belgium
- [3] Floating Gate Etch Profile Control for NAND Flash Memory2016 CHINA SEMICONDUCTOR TECHNOLOGY INTERNATIONAL CONFERENCE (CSTIC), 2016,Chen, Zhuofan论文数: 0 引用数: 0 h-index: 0机构: Semicond Mfg Int Corp, Technol R&D, Pudong New Area, Shanghai 201203, Peoples R China Semicond Mfg Int Corp, Technol R&D, Pudong New Area, Shanghai 201203, Peoples R ChinaZhang, Yiying论文数: 0 引用数: 0 h-index: 0机构: Semicond Mfg Int Corp, Technol R&D, Pudong New Area, Shanghai 201203, Peoples R China Semicond Mfg Int Corp, Technol R&D, Pudong New Area, Shanghai 201203, Peoples R ChinaWang, Yan论文数: 0 引用数: 0 h-index: 0机构: Semicond Mfg Int Corp, Technol R&D, Pudong New Area, Shanghai 201203, Peoples R China Semicond Mfg Int Corp, Technol R&D, Pudong New Area, Shanghai 201203, Peoples R ChinaRen, Jia论文数: 0 引用数: 0 h-index: 0机构: Semicond Mfg Int Corp, Technol R&D, Pudong New Area, Shanghai 201203, Peoples R China Semicond Mfg Int Corp, Technol R&D, Pudong New Area, Shanghai 201203, Peoples R ChinaZhang, Haiyang论文数: 0 引用数: 0 h-index: 0机构: Semicond Mfg Int Corp, Technol R&D, Pudong New Area, Shanghai 201203, Peoples R China Semicond Mfg Int Corp, Technol R&D, Pudong New Area, Shanghai 201203, Peoples R China
- [4] Modified Floating Gate and IPD Profile for Better Cell Performance of Sub-50 nm NAND Flash Memory2010 EIGHTH IEEE WORKSHOP ON MICROELECTRONICS AND ELECTRON DEVICES (IEEE WMED 2010), 2010,Liu, Jennifer Lequn论文数: 0 引用数: 0 h-index: 0机构: Micron Technol Inc, R&D Proc Dev, Boise, ID 83707 USA Micron Technol Inc, R&D Proc Dev, Boise, ID 83707 USAGonzalez, Fernando论文数: 0 引用数: 0 h-index: 0机构: Micron Technol Inc, R&D Proc Dev, Boise, ID 83707 USA Micron Technol Inc, R&D Proc Dev, Boise, ID 83707 USAHu, Y. Jeff论文数: 0 引用数: 0 h-index: 0机构: Micron Technol Inc, R&D Proc Dev, Boise, ID 83707 USA Micron Technol Inc, R&D Proc Dev, Boise, ID 83707 USAYu, Jixin论文数: 0 引用数: 0 h-index: 0机构: Intel JDP, Boise, ID 83707 USA Micron Technol Inc, R&D Proc Dev, Boise, ID 83707 USASrinivasan, Charan论文数: 0 引用数: 0 h-index: 0机构: Intel JDP, Boise, ID 83707 USA Micron Technol Inc, R&D Proc Dev, Boise, ID 83707 USAHill, Ervin论文数: 0 引用数: 0 h-index: 0机构: Intel JDP, Boise, ID 83707 USA Micron Technol Inc, R&D Proc Dev, Boise, ID 83707 USA
- [5] Radiation induced soft errors in 16 nm floating gate SLC NAND flash memoryMICROELECTRONICS RELIABILITY, 2020, 108Chandrashekhar, Sandhya论文数: 0 引用数: 0 h-index: 0机构: Cypress Semicond Corp, San Jose, CA 95134 USA Cypress Semicond Corp, San Jose, CA 95134 USAPuchner, Helmut论文数: 0 引用数: 0 h-index: 0机构: Cypress Semicond Corp, San Jose, CA 95134 USA Cypress Semicond Corp, San Jose, CA 95134 USAMitani, Jun论文数: 0 引用数: 0 h-index: 0机构: Cypress Semicond Corp, San Jose, CA 95134 USA Cypress Semicond Corp, San Jose, CA 95134 USAShinozaki, Satoshi论文数: 0 引用数: 0 h-index: 0机构: SkyHigh Memory Ltd, Hong Kong, Peoples R China Cypress Semicond Corp, San Jose, CA 95134 USASardi, Mohamed论文数: 0 引用数: 0 h-index: 0机构: SkyHigh Memory Ltd, Hong Kong, Peoples R China Cypress Semicond Corp, San Jose, CA 95134 USAHoffman, David论文数: 0 引用数: 0 h-index: 0机构: Cypress Semicond Corp, San Jose, CA 95134 USA Cypress Semicond Corp, San Jose, CA 95134 USA
- [6] New Scaling Limitation of the Floating Gate Cell in NAND Flash Memory2010 INTERNATIONAL RELIABILITY PHYSICS SYMPOSIUM, 2010, : 599 - 603Kim, Yong Seok论文数: 0 引用数: 0 h-index: 0机构: Samsung Elect Co, Semicond Business Div, NAND Flash Proc Architecture Team, San 24, Yongin 446711, Gyunggi Do, South Korea Samsung Elect Co, Semicond Business Div, NAND Flash Proc Architecture Team, San 24, Yongin 446711, Gyunggi Do, South KoreaLee, Dong Jun论文数: 0 引用数: 0 h-index: 0机构: Samsung Elect Co, Semicond Business Div, NAND Flash Proc Architecture Team, San 24, Yongin 446711, Gyunggi Do, South Korea Samsung Elect Co, Semicond Business Div, NAND Flash Proc Architecture Team, San 24, Yongin 446711, Gyunggi Do, South KoreaLee, Chi Kyoung论文数: 0 引用数: 0 h-index: 0机构: Samsung Elect Co, Semicond Business Div, NAND Flash Proc Architecture Team, San 24, Yongin 446711, Gyunggi Do, South Korea Samsung Elect Co, Semicond Business Div, NAND Flash Proc Architecture Team, San 24, Yongin 446711, Gyunggi Do, South KoreaChoi, Hyun Ki论文数: 0 引用数: 0 h-index: 0机构: Samsung Elect Co, Semicond Business Div, NAND Flash Proc Architecture Team, San 24, Yongin 446711, Gyunggi Do, South Korea Samsung Elect Co, Semicond Business Div, NAND Flash Proc Architecture Team, San 24, Yongin 446711, Gyunggi Do, South KoreaKim, Seong Soo论文数: 0 引用数: 0 h-index: 0机构: Samsung Elect Co, Semicond Business Div, NAND Flash Proc Architecture Team, San 24, Yongin 446711, Gyunggi Do, South Korea Samsung Elect Co, Semicond Business Div, NAND Flash Proc Architecture Team, San 24, Yongin 446711, Gyunggi Do, South KoreaSong, Jai Hyuk论文数: 0 引用数: 0 h-index: 0机构: Samsung Elect Co, Semicond Business Div, NAND Flash Proc Architecture Team, San 24, Yongin 446711, Gyunggi Do, South Korea Samsung Elect Co, Semicond Business Div, NAND Flash Proc Architecture Team, San 24, Yongin 446711, Gyunggi Do, South KoreaSong, Du Heon论文数: 0 引用数: 0 h-index: 0机构: Samsung Elect Co, Semicond Business Div, NAND Flash Proc Architecture Team, San 24, Yongin 446711, Gyunggi Do, South Korea Samsung Elect Co, Semicond Business Div, NAND Flash Proc Architecture Team, San 24, Yongin 446711, Gyunggi Do, South KoreaChoi, Jeong-Hyuk论文数: 0 引用数: 0 h-index: 0机构: Samsung Elect Co, Semicond Business Div, NAND Flash Proc Architecture Team, San 24, Yongin 446711, Gyunggi Do, South Korea Samsung Elect Co, Semicond Business Div, NAND Flash Proc Architecture Team, San 24, Yongin 446711, Gyunggi Do, South KoreaSuh, Kang-Deog论文数: 0 引用数: 0 h-index: 0机构: Sungkyunkwan Univ, Sch Informat & Commun Engn, Suwon 440746, South Korea Samsung Elect Co, Semicond Business Div, NAND Flash Proc Architecture Team, San 24, Yongin 446711, Gyunggi Do, South KoreaChung, Chilhee论文数: 0 引用数: 0 h-index: 0机构: Samsung Elect Co, Semicond Business Div, NAND Flash Proc Architecture Team, San 24, Yongin 446711, Gyunggi Do, South Korea Samsung Elect Co, Semicond Business Div, NAND Flash Proc Architecture Team, San 24, Yongin 446711, Gyunggi Do, South Korea
- [7] Unified Endurance Degradation Model of Floating Gate NAND Flash MemoryIEEE TRANSACTIONS ON ELECTRON DEVICES, 2013, 60 (06) : 2031 - 2037Fayrushin, Albert论文数: 0 引用数: 0 h-index: 0机构: Samsung Elect, Hwasung 443731, South Korea Samsung Elect, Hwasung 443731, South KoreaLee, Chang-Hyun论文数: 0 引用数: 0 h-index: 0机构: Samsung Elect, Hwasung 443731, South Korea Samsung Elect, Hwasung 443731, South KoreaPark, Youngwoo论文数: 0 引用数: 0 h-index: 0机构: Samsung Elect, Hwasung 443731, South Korea Samsung Elect, Hwasung 443731, South KoreaChoi, Jeong-Hyuk论文数: 0 引用数: 0 h-index: 0机构: Samsung Elect, Hwasung 443731, South Korea Samsung Elect, Hwasung 443731, South KoreaChung, Chilhee论文数: 0 引用数: 0 h-index: 0机构: Samsung Elect, Hwasung 443731, South Korea Samsung Elect, Hwasung 443731, South Korea
- [8] Characterization of low frequency noise in floating gate NAND flash memory2008 JOINT NON-VOLATILE SEMICONDUCTOR MEMORY WORKSHOP AND INTERNATIONAL CONFERENCE ON MEMORY TECHNOLOGY AND DESIGN, PROCEEDINGS, 2008, : 8 - +Bae, Sung-Ho论文数: 0 引用数: 0 h-index: 0机构: Kyungpook Natl Univ, Sch EECS, Taegu, South Korea Kyungpook Natl Univ, Sch EECS, Taegu, South KoreaLee, Jeong-Hyun论文数: 0 引用数: 0 h-index: 0机构: Kyungpook Natl Univ, Sch EECS, Taegu, South Korea Kyungpook Natl Univ, Sch EECS, Taegu, South KoreaLee, Jong-Ho论文数: 0 引用数: 0 h-index: 0机构: Kyungpook Natl Univ, Sch EECS, Taegu, South Korea Kyungpook Natl Univ, Sch EECS, Taegu, South KoreaKwon, Hyuck-In论文数: 0 引用数: 0 h-index: 0机构: Daegu Univ, Sch Elect Engn, Gyongsan, Gyeongbuk, South Korea Kyungpook Natl Univ, Sch EECS, Taegu, South KoreaLee, Seaung-Suk论文数: 0 引用数: 0 h-index: 0机构: Hynix Semicond Inc, Mobile & Flash Div, Inchon, South Korea Kyungpook Natl Univ, Sch EECS, Taegu, South KoreaOm, Jae-Chul论文数: 0 引用数: 0 h-index: 0机构: Hynix Semicond Inc, Mobile & Flash Div, Inchon, South Korea Kyungpook Natl Univ, Sch EECS, Taegu, South KoreaBae, Gi-Hyun论文数: 0 引用数: 0 h-index: 0机构: Hynix Semicond Inc, Mobile & Flash Div, Inchon, South Korea Kyungpook Natl Univ, Sch EECS, Taegu, South Korea
- [9] Floating Gate Super Multi Level NAND Flash Memory Technology for 30nm and BeyondIEEE INTERNATIONAL ELECTRON DEVICES MEETING 2008, TECHNICAL DIGEST, 2008, : 827 - +Kamigaichi, T.论文数: 0 引用数: 0 h-index: 0机构: Toshiba Co Ltd, Isogo Ku, 8 Shinsugita Cho, Yokohama, Kanagawa 2358522, Japan Toshiba Co Ltd, Isogo Ku, 8 Shinsugita Cho, Yokohama, Kanagawa 2358522, JapanArai, F.论文数: 0 引用数: 0 h-index: 0机构: Toshiba Co Ltd, Isogo Ku, 8 Shinsugita Cho, Yokohama, Kanagawa 2358522, Japan Toshiba Co Ltd, Isogo Ku, 8 Shinsugita Cho, Yokohama, Kanagawa 2358522, JapanNitsuta, H.论文数: 0 引用数: 0 h-index: 0机构: Toshiba Co Ltd, Isogo Ku, 8 Shinsugita Cho, Yokohama, Kanagawa 2358522, Japan Toshiba Co Ltd, Isogo Ku, 8 Shinsugita Cho, Yokohama, Kanagawa 2358522, JapanEndo, M.论文数: 0 引用数: 0 h-index: 0机构: Toshiba Co Ltd, Isogo Ku, 8 Shinsugita Cho, Yokohama, Kanagawa 2358522, Japan Toshiba Co Ltd, Isogo Ku, 8 Shinsugita Cho, Yokohama, Kanagawa 2358522, JapanNishihara, K.论文数: 0 引用数: 0 h-index: 0机构: Toshiba Co Ltd, Isogo Ku, 8 Shinsugita Cho, Yokohama, Kanagawa 2358522, Japan Toshiba Co Ltd, Isogo Ku, 8 Shinsugita Cho, Yokohama, Kanagawa 2358522, JapanMurata, T.论文数: 0 引用数: 0 h-index: 0机构: Toshiba Co Ltd, Isogo Ku, 8 Shinsugita Cho, Yokohama, Kanagawa 2358522, Japan Toshiba Co Ltd, Isogo Ku, 8 Shinsugita Cho, Yokohama, Kanagawa 2358522, JapanTakekida, H.论文数: 0 引用数: 0 h-index: 0机构: Toshiba Co Ltd, Isogo Ku, 8 Shinsugita Cho, Yokohama, Kanagawa 2358522, Japan Toshiba Co Ltd, Isogo Ku, 8 Shinsugita Cho, Yokohama, Kanagawa 2358522, JapanIzumi, T.论文数: 0 引用数: 0 h-index: 0机构: Toshiba Co Ltd, Isogo Ku, 8 Shinsugita Cho, Yokohama, Kanagawa 2358522, Japan Toshiba Co Ltd, Isogo Ku, 8 Shinsugita Cho, Yokohama, Kanagawa 2358522, JapanUchida, K.论文数: 0 引用数: 0 h-index: 0机构: Toshiba Co Ltd, Isogo Ku, 8 Shinsugita Cho, Yokohama, Kanagawa 2358522, Japan Toshiba Co Ltd, Isogo Ku, 8 Shinsugita Cho, Yokohama, Kanagawa 2358522, JapanMaruyama, T.论文数: 0 引用数: 0 h-index: 0机构: Toshiba Co Ltd, Isogo Ku, 8 Shinsugita Cho, Yokohama, Kanagawa 2358522, Japan Toshiba Co Ltd, Isogo Ku, 8 Shinsugita Cho, Yokohama, Kanagawa 2358522, JapanKawabata, I.论文数: 0 引用数: 0 h-index: 0机构: Toshiba Co Ltd, Isogo Ku, 8 Shinsugita Cho, Yokohama, Kanagawa 2358522, Japan Toshiba Co Ltd, Isogo Ku, 8 Shinsugita Cho, Yokohama, Kanagawa 2358522, JapanSuyama, Y.论文数: 0 引用数: 0 h-index: 0机构: Toshiba Co Ltd, Isogo Ku, 8 Shinsugita Cho, Yokohama, Kanagawa 2358522, Japan Toshiba Co Ltd, Isogo Ku, 8 Shinsugita Cho, Yokohama, Kanagawa 2358522, JapanSato, A.论文数: 0 引用数: 0 h-index: 0机构: Toshiba Co Ltd, Isogo Ku, 8 Shinsugita Cho, Yokohama, Kanagawa 2358522, Japan Toshiba Co Ltd, Isogo Ku, 8 Shinsugita Cho, Yokohama, Kanagawa 2358522, JapanUeno, K.论文数: 0 引用数: 0 h-index: 0机构: Toshiba Co Ltd, Isogo Ku, 8 Shinsugita Cho, Yokohama, Kanagawa 2358522, Japan Toshiba Co Ltd, Isogo Ku, 8 Shinsugita Cho, Yokohama, Kanagawa 2358522, JapanTakeshita, H.论文数: 0 引用数: 0 h-index: 0机构: Toshiba Co Ltd, Isogo Ku, 8 Shinsugita Cho, Yokohama, Kanagawa 2358522, Japan Toshiba Co Ltd, Isogo Ku, 8 Shinsugita Cho, Yokohama, Kanagawa 2358522, JapanJoko, Y.论文数: 0 引用数: 0 h-index: 0机构: Toshiba Co Ltd, Isogo Ku, 8 Shinsugita Cho, Yokohama, Kanagawa 2358522, Japan Toshiba Co Ltd, Isogo Ku, 8 Shinsugita Cho, Yokohama, Kanagawa 2358522, JapanWatanabe, S.论文数: 0 引用数: 0 h-index: 0机构: Toshiba Co Ltd, Isogo Ku, 8 Shinsugita Cho, Yokohama, Kanagawa 2358522, Japan Toshiba Co Ltd, Isogo Ku, 8 Shinsugita Cho, Yokohama, Kanagawa 2358522, JapanLiu, Y.论文数: 0 引用数: 0 h-index: 0机构: Toshiba Co Ltd, Isogo Ku, 8 Shinsugita Cho, Yokohama, Kanagawa 2358522, Japan Toshiba Co Ltd, Isogo Ku, 8 Shinsugita Cho, Yokohama, Kanagawa 2358522, JapanMeguro, H.论文数: 0 引用数: 0 h-index: 0机构: Toshiba Co Ltd, Isogo Ku, 8 Shinsugita Cho, Yokohama, Kanagawa 2358522, Japan Toshiba Co Ltd, Isogo Ku, 8 Shinsugita Cho, Yokohama, Kanagawa 2358522, JapanKajita, A.论文数: 0 引用数: 0 h-index: 0机构: Toshiba Co Ltd, Isogo Ku, 8 Shinsugita Cho, Yokohama, Kanagawa 2358522, Japan Toshiba Co Ltd, Isogo Ku, 8 Shinsugita Cho, Yokohama, Kanagawa 2358522, JapanOzawa, Y.论文数: 0 引用数: 0 h-index: 0机构: Toshiba Co Ltd, Isogo Ku, 8 Shinsugita Cho, Yokohama, Kanagawa 2358522, Japan Toshiba Co Ltd, Isogo Ku, 8 Shinsugita Cho, Yokohama, Kanagawa 2358522, JapanWatanabe, T.论文数: 0 引用数: 0 h-index: 0机构: Toshiba Co Ltd, Isogo Ku, 8 Shinsugita Cho, Yokohama, Kanagawa 2358522, Japan Toshiba Co Ltd, Isogo Ku, 8 Shinsugita Cho, Yokohama, Kanagawa 2358522, JapanSato, S.论文数: 0 引用数: 0 h-index: 0机构: SanDisk Corp, Milpitas, CA 95035 USA Toshiba Co Ltd, Isogo Ku, 8 Shinsugita Cho, Yokohama, Kanagawa 2358522, JapanTomiie, H.论文数: 0 引用数: 0 h-index: 0机构: SanDisk Corp, Milpitas, CA 95035 USA Toshiba Co Ltd, Isogo Ku, 8 Shinsugita Cho, Yokohama, Kanagawa 2358522, JapanKanamaru, Y.论文数: 0 引用数: 0 h-index: 0机构: SanDisk Corp, Milpitas, CA 95035 USA Toshiba Co Ltd, Isogo Ku, 8 Shinsugita Cho, Yokohama, Kanagawa 2358522, JapanShoji, R.论文数: 0 引用数: 0 h-index: 0机构: SanDisk Corp, Milpitas, CA 95035 USA Toshiba Co Ltd, Isogo Ku, 8 Shinsugita Cho, Yokohama, Kanagawa 2358522, JapanLai, C. H.论文数: 0 引用数: 0 h-index: 0机构: SanDisk Corp, Milpitas, CA 95035 USA Toshiba Co Ltd, Isogo Ku, 8 Shinsugita Cho, Yokohama, Kanagawa 2358522, JapanNakamichi, M.论文数: 0 引用数: 0 h-index: 0机构: SanDisk Corp, Milpitas, CA 95035 USA Toshiba Co Ltd, Isogo Ku, 8 Shinsugita Cho, Yokohama, Kanagawa 2358522, JapanOowada, K.论文数: 0 引用数: 0 h-index: 0机构: SanDisk Corp, Milpitas, CA 95035 USA Toshiba Co Ltd, Isogo Ku, 8 Shinsugita Cho, Yokohama, Kanagawa 2358522, JapanIshigaki, T.论文数: 0 引用数: 0 h-index: 0机构: SanDisk Corp, Milpitas, CA 95035 USA Toshiba Co Ltd, Isogo Ku, 8 Shinsugita Cho, Yokohama, Kanagawa 2358522, JapanHemink, G.论文数: 0 引用数: 0 h-index: 0机构: SanDisk Corp, Milpitas, CA 95035 USA Toshiba Co Ltd, Isogo Ku, 8 Shinsugita Cho, Yokohama, Kanagawa 2358522, JapanDutta, D.论文数: 0 引用数: 0 h-index: 0机构: SanDisk Corp, Milpitas, CA 95035 USA Toshiba Co Ltd, Isogo Ku, 8 Shinsugita Cho, Yokohama, Kanagawa 2358522, JapanDong, Y.论文数: 0 引用数: 0 h-index: 0机构: SanDisk Corp, Milpitas, CA 95035 USA Toshiba Co Ltd, Isogo Ku, 8 Shinsugita Cho, Yokohama, Kanagawa 2358522, JapanChen, C.论文数: 0 引用数: 0 h-index: 0机构: SanDisk Corp, Milpitas, CA 95035 USA Toshiba Co Ltd, Isogo Ku, 8 Shinsugita Cho, Yokohama, Kanagawa 2358522, JapanLiang, G.论文数: 0 引用数: 0 h-index: 0机构: SanDisk Corp, Milpitas, CA 95035 USA Toshiba Co Ltd, Isogo Ku, 8 Shinsugita Cho, Yokohama, Kanagawa 2358522, JapanHigashitani, M.论文数: 0 引用数: 0 h-index: 0机构: SanDisk Corp, Milpitas, CA 95035 USA Toshiba Co Ltd, Isogo Ku, 8 Shinsugita Cho, Yokohama, Kanagawa 2358522, JapanLutze, J.论文数: 0 引用数: 0 h-index: 0机构: SanDisk Corp, Milpitas, CA 95035 USA Toshiba Co Ltd, Isogo Ku, 8 Shinsugita Cho, Yokohama, Kanagawa 2358522, Japan
- [10] A Compact Model for Channel Coupling in Sub-30 nm NAND Flash Memory DeviceJAPANESE JOURNAL OF APPLIED PHYSICS, 2011, 50 (10)Kang, Myounggon论文数: 0 引用数: 0 h-index: 0机构: Seoul Natl Univ, ISRC, Seoul 151742, South Korea Seoul Natl Univ, Sch Elect Engn & Comp Sci, Seoul 151742, South Korea Samsung Elect Co Ltd, Flash Design Team, Memory Business, Hwasung 445701, Gyeonggi, South Korea Seoul Natl Univ, ISRC, Seoul 151742, South KoreaHahn, Wookghee论文数: 0 引用数: 0 h-index: 0机构: Samsung Elect Co Ltd, Flash Design Team, Memory Business, Hwasung 445701, Gyeonggi, South Korea Seoul Natl Univ, ISRC, Seoul 151742, South KoreaPark, Il Han论文数: 0 引用数: 0 h-index: 0机构: Samsung Elect Co Ltd, Flash Design Team, Memory Business, Hwasung 445701, Gyeonggi, South Korea Seoul Natl Univ, ISRC, Seoul 151742, South KoreaSong, Youngsun论文数: 0 引用数: 0 h-index: 0机构: Samsung Elect Co Ltd, Flash Design Team, Memory Business, Hwasung 445701, Gyeonggi, South Korea Seoul Natl Univ, ISRC, Seoul 151742, South KoreaLee, Hocheol论文数: 0 引用数: 0 h-index: 0机构: Samsung Elect Co Ltd, Flash Design Team, Memory Business, Hwasung 445701, Gyeonggi, South Korea Seoul Natl Univ, ISRC, Seoul 151742, South KoreaChoi, Kihwan论文数: 0 引用数: 0 h-index: 0机构: Samsung Elect Co Ltd, Flash Design Team, Memory Business, Hwasung 445701, Gyeonggi, South Korea Seoul Natl Univ, ISRC, Seoul 151742, South KoreaLim, Youngho论文数: 0 引用数: 0 h-index: 0机构: Samsung Elect Co Ltd, Flash Design Team, Memory Business, Hwasung 445701, Gyeonggi, South Korea Seoul Natl Univ, ISRC, Seoul 151742, South KoreaJoe, Sung-Min论文数: 0 引用数: 0 h-index: 0机构: Seoul Natl Univ, ISRC, Seoul 151742, South Korea Seoul Natl Univ, Sch Elect Engn & Comp Sci, Seoul 151742, South Korea Seoul Natl Univ, ISRC, Seoul 151742, South KoreaChae, Dong Hyuk论文数: 0 引用数: 0 h-index: 0机构: Seoul Natl Univ, ISRC, Seoul 151742, South Korea Seoul Natl Univ, Sch Elect Engn & Comp Sci, Seoul 151742, South Korea Samsung Elect Co Ltd, Flash Design Team, Memory Business, Hwasung 445701, Gyeonggi, South Korea Seoul Natl Univ, ISRC, Seoul 151742, South KoreaShin, Hyungcheol论文数: 0 引用数: 0 h-index: 0机构: Seoul Natl Univ, ISRC, Seoul 151742, South Korea Seoul Natl Univ, Sch Elect Engn & Comp Sci, Seoul 151742, South Korea Seoul Natl Univ, ISRC, Seoul 151742, South Korea