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Broadband MMIC power amplifier for C-X-Ku-band applications

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作者：
College of Information Engineering, Hebei University of Technology, Tianjin 300130, China [1 ]
不详 [2 ]
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来源：
Pan Tao Ti Hsueh Pao | 2007年 / 6卷 / 829-832期
关键词：
High electron mobility transistors - Monolithic microwave integrated circuits - Semiconducting gallium arsenide;
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摘要：
A three-stage MMIC power amplifier operating from 6 to 18 GHz is fabricated using 0.25 μm AlGaAs/InGaAs/GaAs pseudomorphic high electron mobility transistor (PHEMT). The amplifier is fully monolithic, with all matching, biasing, and DC block circuitry included on the chip. The power amplifier has an average power gain of 19dB over 6-18 GHz. At operation frequencies from 6 to 18GHz, the output power is above 33.3 dBm, and the maximum output power of the MMIC is 34.7 dBm at 10 GHz. The input return loss is less than-10 dB and the output return is less than-6dB over operating frequency. This power amplifier has, to our knowledge, the best power gain flatness reported at C-X-Ku-band applications.
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