Internally Harmonic Matched Compact GaN Power Amplifier with 78.5% PAE for 2.45 GHz Wireless Power Transfer Systems

被引：0
|
作者：
Li, Caoyu [1 ]
Zhang, Ziliang [1 ,2 ]
Pei, Yi [3 ]
Chen, Changchang [3 ]
Feng, Gang [1 ,4 ]
Xu, Yuehang [1 ,2 ]
机构：
[1] Yangtze Delta Region Institute (Huzhou), University of Electronic Science and Technology of China, Huzhou,313001, China
[2] School of Electronic Science and Engineering, University of Electronic Science and Technology of China, No. 2006, Xiyuan Ave., West Hi-Tech Zone, Chengdu,611731, China
[3] Dynax Semiconductor Inc., Suzhou,215300, China
[4] National Key Laboratory of Wireless Communications, University of Electronic Science and Technology of China, No. 2006, Xiyuan Ave., West Hi-Tech Zone, Chengdu,611731, China
来源：
Micromachines | 2024年 / 15卷 / 11期
关键词：
In this paper; a high-efficiency compact power amplifier is designed and fabricated with a 0.25 μm GaN high electron mobility transistor (HEMT) to meet the demands of a high integration level and high efficiency for microwave wireless power transfer (WPT) systems. The proposed power amplifier (PA) is implemented using an internally matched method to achieve a compact circuit size. The output second and third harmonic impedances can be optimized through output matching circuits; eliminating the need for additional harmonic matching networks. This approach simplifies the design of matching circuits and reduces the circuit size. Furthermore; the input third harmonic has been controled for improving the efficiency of DC-to-RF conversion. The total size of the proposed PA is (Formula presented.) mm2. The test results obtained from the continuous wave (CW) testing indicate that the output power of the power amplifier at 2.45 GHz reaches 43.75 dBm. Additionally; the large-signal gain is measured at 15.75 dB; and the power-added efficiency (PAE) achieves a value of 78.5%. © 2024 by the authors;
D O I：
10.3390/mi15111354
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