Structural, magnetic, and electrical properties of Co2 MnSiMgOn-GaAs tunnel junctions

被引：0

作者：

Kawagishi, S. ^{[1
]}

Uemura, T. ^{[1
]}

Imai, Y. ^{[1
]}

Matsuda, K.-I. ^{[1
]}

Yamamoto, M. ^{[1
]}

机构：

[1] Division of Electronics for Informatics, Hokkaido University, Kita 14, Nishi 9, Kita-ku, Sapporo 060-0814, Japan

来源：

Journal of Applied Physics | 2008年 / 103卷 / 07期

关键词：

The structural; magnetic; and electrical properties of Co2 MnSi (CMS)/MgO (0-3.0 nm) n-GaAs tunnel junctions were investigated. CMS films with L 21 -ordered structures were grown epitaxially on GaAs. The crystallographic relations were CMS (001) [100] GaAs (001) [110] when a thin MgO interlayer was inserted between the CMS and the GaAs; and CMS (001) [110] GaAs (001) [110] when the CMS film was directly grown on GaAs without a MgO interlayer. The CMS film without a MgO interlayer showed strong magnetic anisotropy consisting of uniaxial anisotropy with an easy axis of CMS [1-10] (GaAs [1-10]) direction and cubic anisotropy with easy axes of CMS〈110〉 directions. The uniaxial anisotropy was weakened in the samples with a MgO interlayer. The magnetization value of the CMS film with a 3.0-nm -thick MgO layer was approximately 820 emu cm3 (3.9 μB f.u.) at room temperature (RT); a value slightly higher (∼7%) than that of the sample without MgO. The resistance value of the CMS/MgO (3.0 nm) n-GaAs junction was approximately two to three orders of magnitude higher than that of the CMSn-GaAs junction at RT. The potential height and width of the tunnel barrier in the CMSMgOn-GaAs junction were estimated to be 0.6 eV and 3.3 nm; respectively. © 2008 American Institute of Physics;

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