Impact of gate metal-induced stress on performance modulation in gate-last metal-oxide-semiconductor field-effect transistors

被引：0

作者：

Matsuki, Takeo ^{[1
]}

Mise, Nobuyuki ^{[1
]}

Inumiya, Seiji ^{[1
]}

Eimori, Takahisa ^{[1
]}

Nara, Yasuo ^{[1
]}

机构：

[1] Semiconductor Leading Edge Technologies, Inc., 16-1 Onogawa, Tsukuba, Ibaraki 305-8569, Japan

来源：

Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers | 2007年 / 46卷 / 5 B期

关键词：

D O I：

暂无

中图分类号：

学科分类号：

摘要：

Journal article (JA)

引用

页码：3181 / 3184

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