Application of HfSiON to deep-trench capacitors of sub-45-nm-node embedded dynamic random-access memory

被引：0

作者：

Ando, Takashi ^{[1
]}

Sato, Naoyuki ^{[1
]}

Hiyama, Susumu ^{[1
]}

Hirano, Tomoyuki ^{[1
]}

Nagaoka, Kojiro ^{[1
]}

Abe, Hitoshi ^{[1
]}

Okuyama, Atsushi ^{[1
]}

Ugajin, Hajime ^{[1
]}

Tai, Kaori ^{[1
]}

Fujita, Shigeru ^{[1
]}

Watanabe, Koji ^{[1
]}

Katsumata, Ryota ^{[2
]}

Idebuchi, Jun ^{[3
]}

Suzuki, Takashi ^{[3
]}

Hasegawa, Toshiaki ^{[1
]}

Iwamoto, Hayato ^{[1
]}

Kadomura, Shingo ^{[1
]}

机构：

[1] Semiconductor Technology Development Group, Semiconductor Solutions Network Company, Sony Corporation, 4-14-1 Asahi-cho, Atsugi, Kanagawa 243-0014, Japan

[2] SoC R and D Center, 8 Shinsugita, Isogo-ku, Yokohama 235-8522, Japan

[3] Process and Manufacturing Engineering Center, Semiconductor Company, Toshiba Corporation, 8 Shinsugita, Isogo-ku, Yokohama 235-8522, Japan

来源：

Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers | 2006年 / 45卷 / 4 B期

关键词：

In this study; the potential of HfSiON as the node dielectric of deep-trench (DT) capacitors was investigated for the first time. It was found out that a uniform thickness and a uniform depth profile of each component in DT can be obtained by the ALD process which utilizes the catalytic effect of the Hf precursor and Si precursor. In addition; the mechanism underlying leakage current was analyzed and it was revealed that residual carbons in the film contribute to the Poole-Frenkel current through the film. On the basis of these findings; we propose the sequential high-pressure ozone treatment (SHO) and Al2O3/HfSiON/ Si3N4 stack for DT applications. Finally; the DT capacitors of 65-nm-node embedded dynamic random-access memory (eDRAM) were fabricated and a capacitance enhancement of 50% from the conventional dielectric (NO) was obtained at the same leakage current. ©2006 The Japan Society of Applied Physics;

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摘要：

Journal article (JA)

引用

页码：3165 / 3169

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