Characteristics of organic light emitting diodes with tetrakis(Ethylmethylamino) hafnium treated indium tin oxide

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作者：
Sohn, Sunyoung [1 ]
Park, Keunhee [1 ]
Jung, Donggeun [1 ]
Kim, Hyoungsub [2 ]
Chae, Heeyeop [3 ]
Kim, Hyunmin [4 ]
Yi, Junsin [4 ]
Cho, Mann-Ho [5 ]
Boo, Jin-Hyo [6 ]
机构：
[1] Department of Physics, Institute of Basic Science, and Brain, Sungkyunkwan University, Suwon 440-746, Korea, Republic of
[2] School of Advanced Materials Science and Engineering, Sungkyunkwan University, Suwon 440-746, Korea, Republic of
[3] Department of Chemical Engineering, Sungkyunkwan University, Suwon 440-746, Korea, Republic of
[4] School of Information and Communication Engineering, Sungkyunkwan University, Suwon 440-746, Korea, Republic of
[5] Institute of Physics and Applied Physics, Yonsei University, 134 Shinchon-Dong, Seodaemun-Ku, Seoul 120-729, Korea, Republic of
[6] Department of Chemistry, Institute of Basic Science, and Brain, Sungkyunkwan University, Suwon 440-746, Korea, Republic of
来源：
Japanese Journal of Applied Physics, Part 2: Letters | 2007年 / 46卷 / 17-19期
关键词：
The surface of indium tin oxide (ITP) in organic light emitting diodes (PLEDs) was treated using an atomic layer deposition with tetrakis(ethylmethylamino) hafnium (TEMAH) and O2 precursors. The treatment for 5 cycles at room temperature resulted in a significant improvement in the electroluminescent characteristics resulting from the increased hole injection. According to the various characterizations; an ultra-thin HfO x layer without any insulating properties was formed; which modified the electronic band structure of the ITP anode. When the number of cycles or temperature was increased; an electrically insulating HfOx was formed; and the resulting PLED properties deteriorated. ©2007 The Japan Society of Applied Physics;
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