Optically pumped spin-polarized carrier transport across Fe wire/GaAs interfaces

被引：0
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作者：
Taniyama, T. [1 ]
Wada, E. [2 ]
Yamazaki, Y. [2 ]
机构：
[1] Materials and Structures Laboratory, Tokyo Institute of Technology, 4259 Nagatsuta, Midori-ku, Yokohama 226-8503, Japan
[2] Department of Innovative and Engineered Materials, Tokyo Institute of Technology, 4259 Nagatsuta, Midori-ku, Yokohama 226-8502, Japan
来源：
Journal of Applied Physics | 2006年 / 99卷 / 08期
关键词：
Spin-selective transport of optically pumped spin-polarized electrons across 5-nm-thick Fe wiresGaAs and 5-nm-thick Fe wiresAl Ox (1.5 nm) GaAs interfaces is studied as functions of magnetic field and temperature. We find characteristic temperature dependence of the spin selectivity at the FeAl Ox p-GaAs interface; where the selectivity shows a maximum at 200 K; which we attribute to the tunneling effect of spin-polarized electrons across the Al Ox layer in the FeAl Ox p-GaAs structure. © 2006 American Institute of Physics;
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