Materials and devices for reduced switching field toggle magnetic random access memory

被引：0

作者：

Worledge, D.C. ^{[1
]}

Trouilloud, P.L. ^{[1
]}

Gaidis, M.C. ^{[1
]}

Lu, Y. ^{[1
]}

Abraham, D.W. ^{[1
]}

Assefa, S. ^{[1
]}

Brown, S. ^{[1
]}

Galligan, E. ^{[1
]}

Kanakasabapathy, S. ^{[1
]}

Nowak, J. ^{[1
]}

O'Sullivan, E. ^{[1
]}

Robertazzi, R. ^{[1
]}

Wright, G. ^{[1
]}

Gallagher, W.J. ^{[1
]}

机构：

[1] IBM Research Division, T. J. Watson Research Center, Yorktown Heights, NY 10598

来源：

Journal of Applied Physics | 2006年 / 100卷 / 07期

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D O I：

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摘要：

Journal article (JA)

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[1] Materials and devices for reduced switching field toggle magnetic random access memory
Worledge, D. C.
Trouilloud, P. L.
Gaidis, M. C.
Lu, Y.
Abraham, D. W.
Assefa, S.
Brown, S.
Galligan, E.
Kanakasabapathy, S.
Nowak, J.
O'Sullivan, E.
Robertazzi, R.
Wright, G.
Gallagher, W. J.
[J]. JOURNAL OF APPLIED PHYSICS, 2006, 100 (07)
[2] Reduction of writing field distribution in a magnetic random access memory with toggle switching
Fukami, Shunsuke
Honjo, Hiroaki
Suzuki, Tetsuhiro
Ishiwata, Nobuyuki
[J]. IEEE TRANSACTIONS ON MAGNETICS, 2007, 43 (08) : 3512 - 3516
[3] Critical-field curves for switching toggle mode magnetoresistance random access memory devices (invited)
Fujiwara, H
Wang, SY
Sun, M
[J]. JOURNAL OF APPLIED PHYSICS, 2005, 97 (10)
[4] Theory for symmetric toggle magnetic random access memory
Worledge, D. C.
Trouilloud, P. L.
Gallagher, W. J.
[J]. APPLIED PHYSICS LETTERS, 2007, 90 (22)
[5] Field assisted spin switching in magnetic random access memory
Jeong, W. C.
Park, J. H.
Oh, J. H.
Koh, G. H.
Jeong, G. T.
Jeong, H. S.
Kim, Kinam
[J]. JOURNAL OF APPLIED PHYSICS, 2006, 99 (08)
[6] Electric Field Assisted Switching in Magnetic Random Access Memory
Han, Guchang
Huang, Jiancheng
Chen, Bingjin
Ter Lim, Sze
Tran, Michael
[J]. IEEE TRANSACTIONS ON MAGNETICS, 2015, 51 (11)
[7] Dynamic and temperature effects in toggle magnetic random access memory
Cimpoesu, Dorin
Stancu, Alexandru
Spinu, Leonard
[J]. JOURNAL OF APPLIED PHYSICS, 2007, 102 (01)
[8] Optimization of magnetic parameters for toggle magnetoresistance random access memory
Wang, SY
Fujiwara, H
[J]. JOURNAL OF MAGNETISM AND MAGNETIC MATERIALS, 2005, 286 : 27 - 30
[9] Dynamic and temperature effects in toggle magnetic random access memory
Cimpoesu, Dorin
Stancu, Alexandru
Spinu, Leonard
[J]. Journal of Applied Physics, 2007, 102 (01):
[10] Theory for toggle magnetic random access memory: The asymmetric case
Worledge, D. C.
[J]. APPLIED PHYSICS LETTERS, 2007, 91 (16)

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