Effect of trap-assisted tunneling (TAT) on the performance of homojunction mid-infrared photodetectors based on InAsSb

被引：0
|
作者：
Chakrabarti, P. [1 ]
Gawarikar, A. [1 ]
Mehta, V. [1 ]
Garg, D. [1 ]
机构：
[1] Centre for Research in Microelectronics, Department of Electronics Engineering, Banaras Hindu University, Varanasi - 221005, India
来源：
Journal of Microwaves and Optoelectronics | 2006年 / 5卷 / 01期
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