1.5MeV proton irradiation effects on electrical and structural properties of TiO2/n-Si interface

被引：0
|
作者：
机构：
[1] Ishfaq, M.
[2] Rizwan Khan, M.
[3] Bhopal, M.F.
[4] Nasim, F.
[5] Ali, A.
[6] Bhatti, A.S.
[7] Ahmed, I.
[8] Bhardwaj, Sunil
[9] Cepek, Cinzia
来源：
| 1600年 / American Institute of Physics Inc.卷 / 115期
关键词：
34;
D O I：
暂无
中图分类号：
学科分类号：
摘要：
Conference article (CA)
引用
收藏
相关论文
共 50 条
  • [31] Structural transformations of TiO2 films with deposition temperature and electrical properties of nanostructure n-TiO2/p-Si heterojunction diode
    Aksoy, Seval
    Caglar, Yasemin
    JOURNAL OF ALLOYS AND COMPOUNDS, 2014, 613 : 330 - 337
  • [32] Effects of ion implantation on the electrical properties of Au/n-Si Schottky diodes
    Joo, MH
    Lee, KH
    Song, JH
    Im, S
    MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY, 2000, 71 : 224 - 228
  • [33] Electrical properties and interface state energy distributions of Cr/n-Si Schottky barrier diode
    Karatas, Sukru
    Yildirim, Nezir
    Turut, Abdulmecit
    SUPERLATTICES AND MICROSTRUCTURES, 2013, 64 : 483 - 494
  • [34] γ-ray irradiation effects on dielectric properties of Au/SiO2/n-Si (MIS) structures
    Tataroglu, A.
    Ataseven, T.
    Sezgin, S.
    Pur, F. Z.
    OPTOELECTRONICS AND ADVANCED MATERIALS-RAPID COMMUNICATIONS, 2011, 5 (3-4): : 443 - 447
  • [35] Effects of proton irradiation on structural and electrochemical charge storage properties of TiO2 nanotube electrodes for lithium-ion batteries
    Smith, Kassiopeia A.
    Savva, Andreas I.
    Deng, Changjian
    Wharry, Janelle P.
    Hwang, Sooyeon
    Su, Dong
    Wang, Yongqiang
    Gong, Jue
    Xu, Tao
    Buttf, Darryl P.
    Xiong, Hui
    JOURNAL OF MATERIALS CHEMISTRY A, 2017, 5 (23) : 11815 - 11824
  • [36] Frequency and temperature dependence of dielectric properties and capacitance–voltage in GO/TiO2/n-Si MOS device
    A. Ashery
    S. A. Gad
    H. Shaban
    Applied Physics A, 2020, 126
  • [37] Ionizing radiation effects on Au/TiO2/n-Si metal-insulator-semiconductor (MIS) structure
    Ertugrul-Uyar, R.
    Buyukbas-Ulusan, A.
    Tataroglu, A.
    JOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICS, 2020, 31 (22) : 19846 - 19851
  • [38] Ionizing radiation effects on Au/TiO2/n-Si metal–insulator-semiconductor (MIS) structure
    R. Ertugrul-Uyar
    A. Buyukbas-Ulusan
    A. Tataroglu
    Journal of Materials Science: Materials in Electronics, 2020, 31 : 19846 - 19851
  • [39] In situ electrical characterization of the Au/n-Si Schottky barrier structure under 1.2 MeV Ar ion irradiation
    Gellanki, Jnaneswari
    Kumari, Renu
    Rani, Rekha
    Chourasiya, Hemant Kumar
    Kumar, Sandeep
    NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, 2024, 552
  • [40] Structural changes in bulk MoS2 as a consequence of 1.5 MeV proton micro beam irradiation
    Ram Kumar
    Sheshamani Singh
    Barnita Paul
    Aditya H. Kelkar
    Neeraj Shukla
    Indian Journal of Physics, 2023, 97 : 4155 - 4159
12345