Characterization of In20Ge15Sb10Te 55 phase change material for phase change memory with low power operation and good data retention

被引：0
|
作者：
Morikawa, Takahiro [1 ]
Kurotsuchi, Kenzo [1 ]
Fujisaki, Yoshihisa [1 ]
Matsui, Yuichi [1 ]
Takaura, Norikatsu [1 ]
机构：
[1] Central Research Laboratory, Hitachi, Ltd., Kokubunji, Tokyo 185-8601, Japan
来源：
Japanese Journal of Applied Physics | 2012年 / 51卷 / 3 PART 1期
关键词：
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摘要：
Phase change memory
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