Effect of Al2O3 on the operation of SiNX-based MIS RRAMs

被引：0
|
作者：
Mavropoulis, A.E. [1 ]
Vasileiadis, N. [1 ,2 ]
Normand, P. [1 ]
Theodorou, C. [3 ]
Ch. Sirakoulis, G. [2 ]
Kim, S. [4 ]
Dimitrakis, P. [1 ]
机构：
[1] Institute of Nanoscience and Nanotechnology, NCSR Demokritos, Ag. Paraskevi 15341, Greece
[2] Department of Electrical and Computer Engineering, Democritus University of Thrace, Xanthi,67100, Greece
[3] Univ. Grenoble Alpes, Univ. Savoie Mont Blanc, CNRS, Grenoble INP, IMEP-LAHC, Grenoble,38000, France
[4] Division of Electronics and Electrical Engineering, Dongguk University, Seoul,04620, Korea, Republic of
来源：
Solid-State Electronics | 2025年 / 223卷
关键词：
Silicon nitride;
D O I：
10.1016/j.sse.2024.109035
中图分类号：
学科分类号：
摘要：
The role of a 3 nm Al2O3 layer on top of stoichiometric LPCVD SiNx MIS RRAM cells is investigated by using various electrical characterization techniques. The conductive filament formation is explained, and a compact model is used to fit the current–voltage curves and find its evolution during each operation cycle. The conduction in SiNx is also studied. © 2024 Elsevier Ltd
引用
收藏
相关论文
共 50 条
  • [31] Mechanism for the κ-Al2O3 to the α-Al2O3 transition and the stability of κ-Al2O3 under volume expansion
    Belonoshko, AB
    Ahuja, R
    Johansson, B
    PHYSICAL REVIEW B, 2000, 61 (05): : 3131 - 3134
  • [32] Cathode encapsulation of organic light emitting diodes by atomic layer deposited Al2O3 films and Al2O3/a-SiNx:H stacks
    Keuning, W.
    van de Weijer, P.
    Lifka, H.
    Kessels, W. M. M.
    Creatore, M.
    JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A, 2012, 30 (01):
  • [33] Comparative study of electrical instabilities in top-gate InGaZnO thin film transistors with Al2O3 and Al2O3/SiNx gate dielectrics
    Lee, Jeong-Min
    Cho, In-Tak
    Lee, Jong-Ho
    Cheong, Woo-Seok
    Hwang, Chi-Sun
    Kwon, Hyuck-In
    APPLIED PHYSICS LETTERS, 2009, 94 (22)
  • [34] Interfacial reactions in Al2O3/Ti, Al2O3/Ti3Al and Al2O3/TiAl bilayers
    Zalar, A
    Baretzky, BMM
    Hofmann, S
    Rühle, M
    Panjan, P
    THIN SOLID FILMS, 1999, 352 (1-2) : 151 - 155
  • [35] JOINING Al2O3 TO Al2O3 BY BRAZING.
    Naka, Masaaki
    Kim, Kaoru
    Okamoto, Ikuo
    Transactions of JWRI (Japanese Welding Research Institute), 1984, 13 (01): : 157 - 158
  • [36] Transparent and flexible capacitors based on nanolaminate Al2O3/TiO2/Al2O3
    Guozhen Zhang
    Hao Wu
    Chao Chen
    Ti Wang
    Jin Yue
    Chang Liu
    Nanoscale Research Letters, 2015, 10
  • [37] Transparent and flexible capacitors based on nanolaminate Al2O3/TiO2/Al2O3
    Zhang, Guozhen
    Wu, Hao
    Chen, Chao
    Wang, Ti
    Yue, Jin
    Liu, Chang
    NANOSCALE RESEARCH LETTERS, 2015, 10
  • [38] Comparison of on-chip MIS capacitors based on stacked HfO2/Al2O3 nanolaminates
    Kartci, Aslihan
    Vancik, Silvester
    Prasek, Jan
    Hrdy, Radim
    Schneider, Michael
    Schmid, Ulrich
    Hubalek, Jaromir
    MATERIALS TODAY COMMUNICATIONS, 2022, 33
  • [39] The Effect of SiNx:H Stoichiometry on Electrical and Chemical Passivation of Al2O3/SiNx:H Stack Layer on p-type Silicon Wafers
    Canar, Hasan Huseyin
    Bektas, Gence
    Kececi, Ahmet Emin
    Asav, Hasan
    Butuner, Sumeyye Kocak
    Arikan, Bulent
    Turan, Rasit
    SILICONPV 2022, THE 12TH INTERNATIONAL CONFERENCE ON CRYSTALLINE SILICON PHOTOVOLTAICS, 2023, 2826
  • [40] EFFECT OF MGO ON STRENGTH OF AL2O3
    JONES, JT
    RAHMAN, SF
    HARVESTE.T
    HUNTER, O
    AMERICAN CERAMIC SOCIETY BULLETIN, 1970, 49 (04): : 496 - &
12345