Effect of Al2O3 on the operation of SiNX-based MIS RRAMs

被引：0
|
作者：
Mavropoulis, A.E. [1 ]
Vasileiadis, N. [1 ,2 ]
Normand, P. [1 ]
Theodorou, C. [3 ]
Ch. Sirakoulis, G. [2 ]
Kim, S. [4 ]
Dimitrakis, P. [1 ]
机构：
[1] Institute of Nanoscience and Nanotechnology, NCSR Demokritos, Ag. Paraskevi 15341, Greece
[2] Department of Electrical and Computer Engineering, Democritus University of Thrace, Xanthi,67100, Greece
[3] Univ. Grenoble Alpes, Univ. Savoie Mont Blanc, CNRS, Grenoble INP, IMEP-LAHC, Grenoble,38000, France
[4] Division of Electronics and Electrical Engineering, Dongguk University, Seoul,04620, Korea, Republic of
来源：
Solid-State Electronics | 2025年 / 223卷
关键词：
Silicon nitride;
D O I：
10.1016/j.sse.2024.109035
中图分类号：
学科分类号：
摘要：
The role of a 3 nm Al2O3 layer on top of stoichiometric LPCVD SiNx MIS RRAM cells is investigated by using various electrical characterization techniques. The conductive filament formation is explained, and a compact model is used to fit the current–voltage curves and find its evolution during each operation cycle. The conduction in SiNx is also studied. © 2024 Elsevier Ltd
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