Robust ultrathin oxynitride with high nitrogen diffusion barrier near its surface formed by NH3 nitridation of chemical oxide and reoxidation with O2

被引：0

作者：

Lai, Chiung Hui ^{[1
,2
]}

Lin, Bo Chun ^{[3
]}

Chang, Kow Ming ^{[1
]}

Hsieh, Kuang Yeu ^{[4
]}

Lai, Yi Lung ^{[5
]}

机构：

[1] Department of Electronics Engineering, Institute of Electronics, National Chiao-Tung University, Hsin-Chu, Taiwan

[2] Department of Electrical Engineering, Chung Chou Institute of Technology, Yuanlin Changhwa 510, Taiwan

[3] Department of Electronic Engineering, Northern Taiwan Institute of Science and Technology, Taipei 112, Taiwan

[4] Nano-technology R and D Division, Emerging Central Laboratory, Macronix International Co., Ltd., Hsinchu, 300, Taiwan

[5] Department of Electronic Engineering, National Taiwan University of Science and Technology, Taipei, Taiwan

来源：

Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers | 2006年 / 45卷 / 6 A期

关键词：

We have proposed an approach for growing robust ultrathin oxynitride using conventional thermal processes with the capability of preventing boron penetration. In this method; we obtain oxynitride with high nitrogen concentration (13 at. %) on the top and low interface state density (D it = 2 × 1010 cm-2 eV-1). The films demonstrate excellent properties in terms of low Dit; low leakage current; high endurance in stressing and superior boron diffusion blocking behavior. This method does not involve any additional capital equipment [such as decoupled plasma nitridation (DPN) or remote plasma nitridation (RPN)] or gas (NO or N2O). In addition; it obtains high-quality oxynitride film with low thermal budget. Most importantly; this process is simple and fully compatible with current process technology. It would be important and interesting for process engineers engaged in the field of gate dielectrics. It is suitable for the next generation of ULSI technology. © 2006 The Japan Society of Applied Physics;

D O I：

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学科分类号：

摘要：

Journal article (JA)

引用

页码：4898 / 4902

共 17 条

[1] Robust ultrathin oxynitride with high nitrogen diffusion barrier near its surface formed by NH3 nitridation of chemical oxide and reoxidation with O2
Lai, Chiung Hui
Lin, Bo Chun
Chang, Kow Ming
Hsieh, Kuang Yeu
Lai, Yi Lung
JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS, 2006, 45 (6A): : 4898 - 4902
[2] Robust ultrathin oxynitride dielectrics by NH3 nitridation and N2O RTA treatment
Pan, TM
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IEEE ELECTRON DEVICE LETTERS, 2000, 21 (08) : 378 - 380
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Chen, YY
Chien, CH
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IEEE ELECTRON DEVICE LETTERS, 2003, 24 (08) : 503 - 505
[4] Characterization of ultrathin oxynitride (18-21Å) gate dielectrics by NH3 nitridation and N2O RTA treatment
Pan, TM
Lei, TF
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IEEE TRANSACTIONS ON ELECTRON DEVICES, 2001, 48 (05) : 907 - 912
[5] High quality interpoly-oxynitride grown by NH3 nitridation and N2O RTA treatment
Pan, TM
Lei, TF
Yang, WL
Cheng, CM
Chao, TS
IEEE ELECTRON DEVICE LETTERS, 2001, 22 (02) : 68 - 70
[6] Synthesis and characterizations of zinc oxide nanoparticles and its ability to detect O2 and NH3 gases
Al-darwesh, Mouhaned Y.
Ibrahim, Sattar S.
Naief, Mohammed Faiad
Mohammed, Ahmed Mishaal
Chebbi, Hammouda
RESULTS IN CHEMISTRY, 2023, 6
[7] Synthesis and characterizations of Zinc oxide nanoparticles and its ability to detect O2 and NH3 gases
Al-darwesh, Mouhaned Y.
Ibrahim, Sattar S.
Naief, Mohammed Faiad
Mohammed, Ahmed Mishaal
Chebbi, Hammouda
RESULTS IN CHEMISTRY, 2024, 7
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1998, Maik Nauka-Interperiodica Publishing (71)
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MUMMEY, MJ
SCHMIDT, LD
SURFACE SCIENCE, 1980, 91 (01) : 301 - 312
[10] Characteristics of SiOxNy films deposited by inductively coupled plasma enhanced chemical vapor deposition using HMDS/NH3/O2/Ar for water vapor diffusion barrier
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THIN SOLID FILMS, 2006, 515 (03) : 917 - 921

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