Vertical GaN Schottky barrier diodes with micrometer pillar Schottky contacts

被引：0
|
作者：
Zhu, Renqiang [1 ]
Li, Bo [2 ]
Li, Shuai [2 ]
Ma, Zhengweng [2 ]
Yang, Huakai [2 ]
He, Shijie [2 ]
Huang, Shuangwu [2 ]
Xiong, Xinbo [2 ]
Chiu, Hsien-Chin [3 ]
Li, Xiaohua [2 ]
Zhang, Bo [1 ,4 ]
Liu, Xinke [2 ]
机构：
[1] Shenzhen Institute for Advanced Study, University of Electronic Science and Technology of China, Shenzhen, China
[2] College of Materials Science and Engineering, State Key Laboratory of Radio Frequency Heterogeneous Integration, Shenzhen University, Shenzhen, China
[3] Department of Electronic Engineering, Chang Gung University, Taoyuan,333, Taiwan
[4] School of Integrated Circuit Science and Engineering, University of Electronic Science and Technology of China, Chengdu, China
来源：
Journal of Physics D: Applied Physics | 2025年 / 58卷 / 10期
关键词：
701.1 Electricity: Basic Concepts and Phenomena - 712.1 Semiconducting Materials - 712.1.2 Compound Semiconducting Materials - 714.2 Semiconductor Devices and Integrated Circuits - 904 - 942.1.6;
D O I：
10.1088/1361-6463/ada391
中图分类号：
学科分类号：
摘要：
32
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