Thin film transistor using amorphous InGaZnO films as both channel and source/drain electrodes

被引：0
|
作者：
Park, Kyung [1 ]
Choi, Ju-Yun [1 ]
Lee, Hoo-Jeong [1 ]
Kwon, Jang-Yeon [2 ]
Kim, Hyoungsub [1 ]
机构：
[1] School of Advanced Materials Science and Engineering, Sungkyunkwan University, Suwon, Gyeonggi 440-746, Korea, Republic of
[2] Department of Materials Science and Engineering, Seoul National University, Seoul 151-744, Korea, Republic of
来源：
Japanese Journal of Applied Physics | 2011年 / 50卷 / 9 PART 1期
关键词：
Compilation and indexing terms; Copyright 2025 Elsevier Inc;
D O I：
096504
中图分类号：
学科分类号：
摘要：
Thin film circuits - Thin films - Carrier concentration - Semiconducting films - Semiconducting indium compounds - Zinc compounds - Gallium compounds - Amorphous films - Conductive films - Fabrication - Electrodes - Polymer films
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